The present disclosure provides a transferring head and a method for manufacturing an electronic device. The transferring head includes a substrate, a head unit, and a plurality of connecting elements. The head unit includes an electrode and a cantilever supporting the electrode. Two adjacent ones of the connecting elements are disposed between the substrate and the head unit. The electrode and a part of the cantilever are suspended over the substrate, and the cantilever is connected between one of the plurality of connecting elements and the electrode. The electrode is spaced apart from the plurality of connecting elements when viewed along a normal direction of the substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a space for treating a substrate therein; a support unit for supporting the substrate within the chamber; and an insulation member having a space of a predetermined volume therein.

A method may include heating a substrate in a first chamber to a platen temperature, the heating comprising heating the substrate on a platen; measuring the platen temperature in the first chamber using a contact temperature measurement; transferring the substrate to a second chamber after the heating; and measuring a voltage decay after transferring the substrate to the second chamber, using an optical pyrometer to measure pyrometer voltage as a function of time.

Various kinematic mounts used to mount a carrier ring carrying a substrate to a pedestal within a processing chamber. Each of the various kinematic mounts provide a smooth gliding action during mounting, reduce the generation of unwanted particles and prevent free-fall of the carrier ring to the pedestal.

Electrostatic chucks and methods of using electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a heating element embedded within the ceramic body, and two or more temperature measurement devices embedded within the ceramic body. Exemplary methods include measuring temperatures within the electrostatic chuck using two or more vertically spaced-apart temperature measurement devices.

The present disclosure provides a thin-film-deposition equipment, which includes a main body, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the main body. The main body includes a reaction chamber, and two sensor areas connected to the reaction chamber, wherein the sensor areas are smaller than the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the two shield members are separate from each other into an open state, and respectively enter the two sensor areas. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier.

A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

A wafer fabricating system includes a wafer chuck, a gas inlet port, a fluid inlet port, first and second arc-shaped channels, a gas source, and a fluid containing source. The wafer chuck has a top surface, and orifices are formed on the top surface. The gas inlet port is formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices. The fluid inlet port is formed in the wafer chuck. The first and second arc-shaped channels are fluidly communicated with the fluid inlet port and located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view. The gas source fluidly is connected to the gas inlet port. The fluid containing source fluidly is connected to the fluid inlet port.

An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF.sub.3 gas and a N.sub.2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF.sub.3 gas to the N.sub.2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.