A transfer apparatus for transferring a plurality of light emitting diode chips, comprising a stage on which a first substrate having the plurality of light emitting diode chips mounted on one surface is placed, a work table on which a second substrate to which the plurality of light emitting diode chips are to be transferred is placed, and a push pin module for transferring the plurality of light emitting diode chips to the second substrate by pushing the other surface of the first substrate in a state that one surface of the first substrate and the second substrate are disposed to face each other, wherein the push pin module includes a plurality of push pin units each including a push pin for pushing the other surface of the first substrate, and the push pin module transfers the plurality of light emitting diode chips corresponding to each push pin of the plurality of push pin units to the second substrate at a time.

A support unit for supporting a substrate includes a heating member and a reflector, and the reflector includes a curved surface that reflects thermal energy generated by the heating member toward an edge region of the substrate.

A temperature control system and method are provided. The temperature control system includes: a bearing platform including a central platform and multiple edge platforms arranged around same; multiple temperature control modules each connected to a respective edge platform and configured to regulate temperature of a corresponding region of a wafer on the edge platform; a parameter acquisition module configured to acquire temperatures of the wafer; and a processing module configured to acquire a temperature abnormal region of the wafer and regulate a temperature of the temperature control module corresponding to the temperature abnormal region. The parameter acquisition module is used to acquire the temperatures of the wafer on the bearing platform, to acquire the temperature abnormal region of the wafer. Then, the processing module acquires the corresponding temperature control module based on the position of the temperature abnormal region. The temperatures at specific positions of a wafer are accurately controlled.

A micro camera is placed in an appropriate image capturing position therefor on the basis of a center-to-center distance depending on a rotational angle of a holding table. Even in the case where the center C0 of a holding surface and the center C1 of a wafer are displaced out of alignment with each other, allowing a position in X-axis directions of an outer circumference of the wafer to vary as the holding table rotates, a control unit can make an image capturing range of the micro camera follow the varying position of the outer circumference of the wafer. Therefore, the image capturing range of the micro camera can be determined with ease. Both a surface of the wafer and the outer circumference of the wafer can be inspected simply when two cameras are moved along the X-axis directions by a single X-axis moving mechanism.

A laser processing method for processing a wafer using a laser processing apparatus, where the laser processing apparatus includes a holding unit, a laser oscillator for emitting a pulsed laser beam, a polygon mirror for dispersing the pulsed laser beam emitted from the laser oscillator, a condenser for condensing the pulsed laser beam dispersed by the polygon mirror and applying the condensed pulsed laser beam to the workpiece and dispersed region adjuster for controlling a dispersed region of the pulsed laser beam, where the laser processing method includes steps of holding the workpiece on the holding unit and processing the workpiece held by the holding unit by applying the pulsed laser beam, where during processing, the dispersed region adjuster controls the dispersed region of the pulsed laser beam by causing the pulsed laser beam to follow a direction in which the mirror facets of the polygon mirror are rotated.

A supporting member on which a wafer table is mounted is substantially kinematically supported, via six rod members placed on a slider. Further, coupling members are placed facing in a non-contact manner via a predetermined gap, thin plate-shaped edges provided at both ends in the Y-axis direction of the supporting member. By this arrangement, vibration-damping is performed by the coupling members (squeeze dampers) facing the edges, on vibration of the supporting member mounted on the wafer table. Further, because the supporting member is kinematically supported via the plurality of rod members, it becomes possible to reduce deformation of the wafer table that accompanies deformation of the slider.

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

A chuck assembly includes an upper surface configured to support a wafer-level package assembly and a clamping mechanism securing the wafer-level package assembly to the upper surface.

Disclosed is a method for constructing a micro-LED display module. The method includes: retaining micro-LED chips in a matrix on a chip retaining member; picking up the micro-LED chips on the chip retaining member and transferring the picked up micro-LED chips to a planar carrier member; pressing the micro-LED chips on the planar carrier member against a mount substrate; and heating solders disposed on the mount substrate above the melting point of the solders simultaneously with the pressing of the micro-LED chips against the mount substrate to bond the micro-LED chips to the mount substrate. The mount substrate is sucked by a suction chuck during heating of the solders.

A temperature measurement method includes: a temperature calibrator with a first test structure of which a resistance forms a first functional relationship with a temperature is placed on a stage in a chamber; a temperature of the chamber is made to reach a set temperature; a voltage is applied to two opposite ends of the first test structure to obtain a corresponding current and a corresponding resistance; and an actual temperature of the temperature calibrator is acquired according to the resistance and the first functional relationship.