There is provided a semiconductor element containing gallium nitride. The semiconductor element includes a semiconductor layer including a first surface having a first region and a second region that is a projecting portion having a strip shape and projecting relative to the first region or a recessed portion having a strip shape and being recessed relative to the first region. Of the first surface, at least one of surfaces of the first region and the second region includes a crystal plane having a plane orientation different from a (000-1) plane orientation and a (1-100) plane orientation.

Provided is a method of manufacturing a semiconductor structure. The method includes: providing a substrate, where the substrate includes a plurality of component areas and peripheral areas surrounding the plurality of component areas; next, forming a sacrificial layer on each of the plurality of component areas, and forming a semiconductor active layer on the sacrificial layer and the substrate not covered with the sacrificial layer; patterning the semiconductor active layer to remove the semiconductor active layer on the peripheral areas so as to form a plurality of annular grooves which expose the sacrificial layer, such that the semiconductor active layer on each of the plurality of component areas is independent; afterwards, removing the sacrificial layer on each of the plurality of component areas through the annular grooves, such that the independent semiconductor active layer is separated from the substrate, where the independent semiconductor active layer forms a semiconductor structure.

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes: providing a device wafer and a carrier wafer, the device wafer including an SOI substrate comprising, stacked from the bottom upward, a lower substrate, a buried insulator layer and a semiconductor layer; bonding the device wafer at a front side thereof to the carrier wafer; removing at least the lower substrate through thinning the device wafer from a backside thereof, wherein the backside of the device wafer opposes the front side thereof; and providing a high-resistance substrate and bonding the device wafer at the backside thereof to the high-resistance substrate, the high-resistance substrate having a resistivity higher than that of the lower substrate. With the present disclosure, lower signal loss and improved signal linearity can be achieved while avoiding a significant cost increase.

The present disclosure relates to a device and method for removing metal gallium, and a laser lift-off system. The device includes a device body, and the device body includes a process chamber (10), wherein fluid used for removing metal gallium left on the surfaces of multiple Micro Light Emitting Diode (Micro-LED) chips after laser lift-off is contained in the process chamber (10); and a temperature of the fluid is greater than or equal to a melting point of metal gallium.

The present disclosure is directed to at least one embodiment of a die including a sidewall having a uniform surface and an irregular surface. The uniform surface may be a scalloped surface and scallops of the scalloped surface are substantially the same size and shape relative to each other. The irregular surface has a more irregular texture as compared to the uniform surface. The irregular surface may include a plurality of randomly spaced high points and a plurality of randomly spaced low points that are between adjacent ones of the high points. In a method of manufacturing the die, a cavity is pre-formed in a substrate and a multilayer structure is formed on the substrate. The multilayer structure includes an active area that is aligned with and overlies the cavity. After the multilayer structure is formed, at least one recess is formed extending into the multilayer structure to the cavity. Forming the recess forms a die structure suspended above the cavity and an extension extending from the die structure to a suspension structure surrounding the die structure. The die structure is released from the die suspension structure by breaking the extension.

A method for manufacturing a semiconductor element according to the present disclosure includes an element layer forming step of forming a semiconductor element layer on a first surface of a ground substrate; a first supporting substrate preparing step of positioning a first supporting substrate that has a third surface and has a bonding material located on the third surface so that the third surface faces the first surface; a pressing step of causing the bonding material to enter a gap between the ground substrate and the semiconductor element layer; and a peeling step of peeling off the first supporting substrate, the bonding material, and the semiconductor element layer from the ground substrate.

An apparatus is provided which comprises: a plurality of nanowire transistors stacked vertically, wherein each nanowire transistor of the plurality of nanowire transistors comprises a corresponding nanowire of a plurality of nanowires; and a gate stack, wherein the gate stack fully encircles at least a section of each nanowire of the plurality of nanowires.

A method of printing comprises providing a component source wafer comprising components, a transfer device, and a patterned substrate. The patterned substrate comprises substrate posts that extend from a surface of the patterned substrate. Components are picked up from the component source wafer by adhering the components to the transfer device. One or more of the picked-up components are printed to the patterned substrate by disposing each of the one or more picked-up components onto one of the substrate posts, thereby providing one or more printed components in a printed structure.

The invention relates to a method for transferring at least one layer of material, comprising: producing first and second separating layers (108, 110), one against the other, on a first substrate (104); producing the layer to be transferred on the second separating layer (110); securing the layer to be transferred to a second substrate (106), forming a stack of different materials; and performing mechanical separation at the interface between the separating layers; in which the materials of the stack are such that the interface between the first and second separating layers has the weakest adhesion force, and the method comprises a step reducing an initial adhesion force of the interface between the first and second separating layers.

A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.