An embodiment semiconductor device includes an interposer, a semiconductor die electrically connected to the interposer, an integrated passive device die electrically connected to the interposer, the integrated passive device die including two or more seal rings, and a first alignment mark formed on the integrated passive device die within a first area enclosed by a first one of the two or more seal rings. The integrated passive device die may further include two or more integrated passive devices located within respective areas enclosed by respective ones of the two or more seal rings. Each of the two or more integrated passive devices may include electrical connections that are formed as a plurality of micro-bumps, and the first alignment mark may be electrically isolated from the electrical connections, and the first alignment mark and the electrical connections may share a common material.

A semiconductor device is provided. The semiconductor device includes: a substrate which includes a semiconductor chip region and a scribe line region surrounding the semiconductor chip region; an insulating film arranged over the semiconductor chip region and the scribe line region on the substrate, and including a first surface, a second surface opposite to the first surface, a third surface connecting the first surface and the second surface, and a fourth surface opposite to the third surface and connecting the first surface and the second surface; and an opening portion formed on the second surface of the insulating film and the fourth surface of the insulating film to expose the substrate, wherein the opening portion is formed in the scribe line region, and the first surface of the insulating film and the third surface of the insulating film do not include an opening portion which expose the substrate.

A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.

The method for manufacturing an element chip includes: sticking an adhesive tape having translucency to a front surface of a semiconductor wafer; measuring a position and a width of a second close contact portion in a dividing region; applying a laser beam having a beam diameter smaller than the width of the second close contact portion to the adhesive tape such that the laser beam does not protrude from the second close contact portion based on the width of the second close contact portion and the beam diameter, and forming an exposed portion; exposing the front surface to plasma with a back surface held by a dicing tape, and while protecting an element region from the plasma with an adhesive tape, etching the dividing region exposed in the exposed portion to dice the substrate into a plurality of element chips; and removing the adhesive tape remaining on the front surface.

A wafer processing method includes a first fixing step of making a first resin sheet conform to a circular recessed portion and a ring-shaped reinforcing portion of a wafer by fixing an undersurface of the wafer to the first resin sheet, after the first fixing step, a second fixing step of forming a cavity between the first resin sheet fixed to the circular recessed portion and a second resin sheet by fixing the second resin sheet to the first resin sheet fixed to the ring-shaped reinforcing portion, after the second fixing step, a holding step of holding the second resin sheet of the wafer on a chuck table, and a groove forming step of forming a separating groove for separating the circular recessed portion and the ring-shaped reinforcing portion from each other.

A wafer processing method includes a first fixing step of making a first resin sheet conform to a circular recessed portion and a ring-shaped reinforcing portion of a wafer by fixing an undersurface of the wafer to the first resin sheet, after the first fixing step, a second fixing step of forming a cavity between the first resin sheet fixed to the circular recessed portion and a second resin sheet by fixing the second resin sheet to the first resin sheet fixed to the ring-shaped reinforcing portion, after the second fixing step, a holding step of holding the second resin sheet of the wafer on a chuck table, and a groove forming step of forming a separating groove for separating the circular recessed portion and the ring-shaped reinforcing portion from each other.

A method of packaging an integrated circuit includes forming a first integrated circuit and a second integrated circuit on a wafer, the first and second integrated circuit separated by a singulation region. The method includes covering the first and second integrated circuits with a molding compound, and sawing through the molding compound and a top portion of the wafer using a beveled saw blade, while leaving a bottom portion of the wafer remaining. The method further includes sawing through the bottom portion of the wafer using a second saw blade, the second saw blade having a thickness that is less than a thickness of the beveled saw blade. The resulting structure is within the scope of the present disclosure.

Embodiments relate to forming a conformable interface layers (clayers) on small semiconductor devices, such as light emitting diodes (LEDs) to facilitate adhesion with a pick-up head for operations during the manufacturing of an electronic display. A conformable material is formed in regions between LED dies on a carrier substrate and over the LED dies. A mask is applied over the conformable material to selectively cover the conformable material. Portions of the conformable material are exposed to light to selectively cure or not cure the portions of the conformable material. The conformable material between the LED dies is removed to form a conformable interface layer over each of the LED dies.

Embodiments relate to forming a conformable interface layers (clayers) on small semiconductor devices, such as light emitting diodes (LEDs) to facilitate adhesion with a pick-up head for operations during the manufacturing of an electronic display. A conformable material is formed in regions between LED dies on a carrier substrate and over the LED dies. A mask is applied over the conformable material to selectively cover the conformable material. Portions of the conformable material are exposed to light to selectively cure or not cure the portions of the conformable material. The conformable material between the LED dies is removed to form a conformable interface layer over each of the LED dies.

A semiconductor substrate is provided. The semiconductor substrate includes a center portion and a peripheral portion. The semiconductor substrate further includes an annulus of sacrificial material disposed at a front side of the semiconductor substrate and extending at least partially through the semiconductor substrate. The annulus of sacrificial material separates the center portion of the substrate from the peripheral portion of the substrate at the front side. The semiconductor substrate can be thinned to expose the annulus of sacrificial material and disconnect the peripheral portion from the center portion. In doing so, the thinned substrate may have a planar substrate edge void of sharp edges, thereby increasing its mechanical robustness.