A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.

A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.

An artificial intelligence (AI) chip includes: a plurality of memory dies each for storing data; a plurality of computing dies each of which performs a computation included in an AI process; and a system chip that controls the plurality of memory dies and the plurality of computing dies. Each of the plurality of memory dies has a first layout pattern. Each of the plurality of computing dies has a second layout pattern. A second memory die which is one of the plurality of memory dies is stacked above the first layout pattern of a first memory die which is one of the plurality of memory dies. A second computing die which is one of the plurality of computing dies is stacked above the second layout pattern of a first computing die which is one of the plurality of computing dies.

A method for forming a hybrid semiconductor device includes growing a stack of layers on a semiconductor substrate. The stack of layers includes a bottom layer in contact with the substrate, a middle layer on the bottom layer and a top layer on the middle layer. First and second transistors are formed on the top layer. A protective dielectric is deposited over the first and second transistors. A trench is formed adjacent to the first transistors to expose the middle layer. The middle layer is removed from below the first transistors to form a cavity. A dielectric material is deposited in the cavity to provide a transistor on insulator structure for the first transistors and a bulk substrate structure for the second transistors.

One feature pertains to an integrated circuit that includes an antifuse having a conductor-insulator-conductor structure. The antifuse includes a first conductor plate, a dielectric layer, and a second conductor plate, where the dielectric layer is interposed between the first and second conductor plates. The antifuse transitions from an open circuit state to a closed circuit state if a programming voltage V.sub.pp greater than or equal to a dielectric breakdown voltage V.sub.BD of the antifuse is applied to the first conductor plate and the second conductor plate. The first conductor plate has a total edge length that is greater than two times the sum of its maximum width and maximum length dimensions. The first conductor plate's top surface area may also be less than the product of its maximum length and maximum width.

Embodiments herein describe techniques for a semiconductor device including a capacitor and a transistor above the capacitor. A contact electrode may be shared between the capacitor and the transistor. The capacitor includes a first plate above a substrate, and the shared contact electrode above the first plate and separated from the first plate by a capacitor dielectric layer, where the shared contact electrode acts as a second plate for the capacitor. The transistor includes a gate electrode above the substrate and above the capacitor; a channel layer separated from the gate electrode by a gate dielectric layer, and in contact with the shared contact electrode; and a source electrode above the channel layer, separated from the gate electrode by the gate dielectric layer, and in contact with the channel layer. The shared contact electrode acts as a drain electrode of the transistor. Other embodiments may be described and/or claimed.

An RFID tag includes: a flexible, sheet-shaped substrate; an antenna pattern that is formed on the substrate; an IC chip that is mounted on the substrate and that is connected to the antenna pattern; an adhesive member that adheres the IC chip to the substrate; and a reinforcement member that covers the IC chip and the adhesive, and that is at a position such that a central portion of the reinforcement member is offset along a length direction of the substrate with respect to the IC chip and the adhesive member.

An RFID tag includes: a flexible, sheet-shaped substrate; an antenna pattern that is formed on the substrate; an IC chip that is mounted on the substrate and that is connected to the antenna pattern; an adhesive member that adheres the IC chip to the substrate; and a reinforcement member that covers the IC chip and the adhesive, and that is at a position such that a central portion of the reinforcement member is offset along a length direction of the substrate with respect to the IC chip and the adhesive member.