An anti-electromagnetic interference radio frequency module and an implementation method therefor. The anti-electromagnetic interference radio frequency module comprises a radio frequency module body, the inside of the radio frequency module body is provided with an electrical connection area (1) and a grounding area (2), a metal thin film structure (4) is attached to an upper surface and side surfaces of the radio frequency module body, and the metal thin film structure is connected to the grounding area, forming an anti-electromagnetic interference shielding layer structure which is integrated with the radio frequency module body. The radio frequency module achieves an anti-electromagnetic interference effect by means of the anti-electromagnetic interference shielding layer structure, so that electromagnetic interference generated around the radio frequency module is effectively isolated, thereby improving the performance of the radio frequency module.

Embodiments herein may describe techniques for an integrated circuit including a metal interconnect above a substrate, an interlayer dielectric (ILD) layer above the metal interconnect with an opening to expose the metal interconnect at a bottom of the opening. A dielectric layer may conformally cover sidewalls and the bottom of the opening and in contact with the metal interconnect. An electrode may be formed within the opening, above the metal interconnect, and separated from the metal interconnect by the dielectric layer. After a programming voltage may be applied between the metal interconnect and the electrode to generate a current between the metal interconnect and the electrode, a conductive path may be formed through the dielectric layer to couple the metal interconnect and the electrode, changing the resistance between the metal interconnect and the electrode. Other embodiments may be described and/or claimed.

Embodiments herein may describe techniques for an integrated circuit including a metal interconnect above a substrate, an interlayer dielectric (ILD) layer above the metal interconnect with an opening to expose the metal interconnect at a bottom of the opening. A dielectric layer may conformally cover sidewalls and the bottom of the opening and in contact with the metal interconnect. An electrode may be formed within the opening, above the metal interconnect, and separated from the metal interconnect by the dielectric layer. After a programming voltage may be applied between the metal interconnect and the electrode to generate a current between the metal interconnect and the electrode, a conductive path may be formed through the dielectric layer to couple the metal interconnect and the electrode, changing the resistance between the metal interconnect and the electrode. Other embodiments may be described and/or claimed.

The technology relates to a system on chip (SoC). The SoC may include a network on layer including one or more routers and an application specific integrated circuit (ASIC) layer bonded to the network layer, the ASIC layer including one or more components. In some instances, the network layer and the ASIC layer each include an active surface and a second surface opposite the active surface. The active surface of the ASIC layer and the second surface of the network may each include one or more contacts, and the network layer may be bonded to the ASIC layer via bonds formed between the one or more contacts on the second surface of the network layer and the one or more contacts on the active surface of the ASIC layer.

A semiconductor structure includes fins that have a 2D material, such as Graphene, upon at least the fin sidewalls. The thickness of the 2D material sidewall may be tuned to achieve desired finFET band gap control. Neighboring fins of the semiconductor structure form fin wells. The semiconductor structure may include a fin cap upon each fin and the 2D material is formed upon the sidewalls of the fin and the bottom surface of the fin wells. The semiconductor structure may include a well-plug at the bottom of the fin wells and the 2D material is formed upon the sidewalls and upper surface of the fins. The semiconductor structure may include both fin caps and well-plugs such that the 2D material is formed upon the sidewalls of the fins.

A manufacturing method of a semiconductor package includes locating a plurality of semiconductor packages on a substrate, forming a resin insulating layer covering the plurality of semiconductor devices, forming grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the substrate, and irradiating the substrate with laser light in positional correspondence with the grooves to separate the plurality of semiconductor devices from each other.

A manufacturing method of a semiconductor package includes locating a plurality of semiconductor packages on a substrate, forming a resin insulating layer covering the plurality of semiconductor devices, forming grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the substrate, and irradiating the substrate with laser light in positional correspondence with the grooves to separate the plurality of semiconductor devices from each other.

A semiconductor integrated circuit device (1000) includes: a first semiconductor chip CHP1 having a first circuit; and a second semiconductor chip (CHP2) having a second circuit and differing from the first semiconductor chip (CHP1). The semiconductor integrated circuit device (1000) further includes a control circuit (BTCNT) for controlling an operation of the first circuit and an operation of the second circuit in accordance with a control signal in a burn-in test, and the control circuit (BTCNT) controls the first circuit and the second circuit such that an amount of stress applied to the first semiconductor chip (CHP1) due to an operation of the first circuit and an amount of stress applied to the second semiconductor chip (CHP2) due to an operation of the second circuit differ from each other in the burn-in test.

A semiconductor integrated circuit device (1000) includes: a first semiconductor chip CHP1 having a first circuit; and a second semiconductor chip (CHP2) having a second circuit and differing from the first semiconductor chip (CHP1). The semiconductor integrated circuit device (1000) further includes a control circuit (BTCNT) for controlling an operation of the first circuit and an operation of the second circuit in accordance with a control signal in a burn-in test, and the control circuit (BTCNT) controls the first circuit and the second circuit such that an amount of stress applied to the first semiconductor chip (CHP1) due to an operation of the first circuit and an amount of stress applied to the second semiconductor chip (CHP2) due to an operation of the second circuit differ from each other in the burn-in test.

A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.