Provided is a resin composition for encapsulating which is used for forming an encapsulating resin of an on-vehicle electronic control unit including a wiring substrate, a plurality of electronic components mounted on the wiring substrate, and the encapsulating resin encapsulating the electronic component, the resin composition including: a thermosetting resin; and imidazoles, in which when a torque value is measured over time under conditions of the number of rotations of 30 rpm and a measurement temperature of 175° C. by using Labo Plastomill, a time T.sub.1 at which the torque value is less than or equal to 2 times a minimum torque value is longer than or equal to 15 seconds and shorter than or equal to 100 seconds, and the minimum torque value is greater than or equal to 0.5 N.Math.m and less than or equal to 2.5 N.Math.m.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

An exemplary embodiment of the present invention provides a filler comprising a silica core, a first layer in communication with the core, and a second layer in communication with the first layer. The presence of the second layer can decrease the coefficient of thermal expansion, decrease the composite modulus, and increase the glass transition temperature of the modulus as compared to fillers without a second layer.

A semiconductor package that includes a support wiring structure. A semiconductor chip is on the support wiring structure. A cover wiring structure is on the semiconductor chip. A plurality of connection structures penetrates a filling member and electrically connects the support wiring structure to the cover wiring structure. The filling member fills a space between the support wiring structure and the cover wiring structure. The filling member surrounds the plurality of connection structures and the semiconductor chip and includes a plurality of fillers. A partial portion of the plurality of fillers includes cutting fillers having a flat surface that extends along a vertical level that is a reference level.

Provided is a semiconductor package device including a lower redistribution substrate including a first redistribution pattern, the first redistribution pattern including a first interconnection portion and a first via portion provided on the first interconnection portion, a semiconductor chip disposed on the lower redistribution substrate, the semiconductor chip including a chip pad facing the lower redistribution substrate, an upper redistribution substrate vertically spaced apart from the lower redistribution substrate, the upper redistribution substrate including a second redistribution pattern, a vertical conductive structure disposed between the lower redistribution substrate and the upper redistribution substrate and disposed at a side of the semiconductor chip, a third redistribution pattern disposed between the lower redistribution substrate and the vertical conductive structure, and an encapsulant disposed on the semiconductor chip, the vertical conductive structure, and the third redistribution pattern, wherein the first via portion is in contact with the third redistribution pattern, and wherein a level of a bottom surface of the vertical conductive structure is higher than a level of a bottom surface of the chip pad.

A particle production apparatus 1 includes a processing section 3 in which a processing liquid is allowed to adhere to a surface of each of inorganic particles contained in a powder material, a chamber 4 connected to the processing section 3 at a downstream side thereof in which the powder material is separated from gas carrying the powder material, a powder material supply device 50 having a supply portion 5 and a supply unit 6 for supplying the powder material and the like into the processing section 3, and a processing liquid spraying device 70 having a nozzle 7, a pump 8, a supply unit 9 for supplying the processing liquid, a high-pressure gas (air) generating unit 11 and the like. The processing liquid spraying device 70 is configured to spray the processing liquid as droplets onto the powder material just after the powder material being supplied into the processing section 3. Preferably, a volume of the processing section 3 is smaller than a volume of the chamber 4.

A light emitting device includes a light emitting element, a molded member, and a sealing member. The light emitting element is arranged on or above the molded member. The sealing member covers the light emitting element. The sealing member contains a phosphor, and a filler material. The phosphor can be excited by light of the light emitting element, and emit luminescent radiation. The filler material contains neodymium hydroxide, neodymium aluminate or neodymium silicate. The filler material absorbs a part of the spectrum of the mixed light of the light emitting element and the phosphor so that the other parts of the spectrum of this mixed light are extracted from the light emitting device.

Provided is a resin composition, a molded body of which is an electromagnetic wave absorber. An imaginary part (ε″) of a complex dielectric constant at 25° C. and 10 GHz and a volume resistivity (ρv) at 25° C. of the molded body satisfy the relational expression (1) below, and the imaginary part (ε″) is greater than 1.25. 20<(log ρv)×ε″<600 (1)

Provided is a liquid sealing material for copper bumps which is inhibited from suffering filler separation during thermal curing and thereby causing bump cracking. Also provided is a resin composition for use as the sealing material. The resin composition according to the present invention comprises (A) a liquid epoxy resin, (B) a hardener, and (C) an alumina filler having a surface treated with the silane coupling agent of the following formula (1).

In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically contacting the chip metal surface, and packaging material including a contact layer being in physical contact with the chip metal surface and/or with the metal contact structure; wherein at least in the contact layer of the packaging material, a summed concentration of chemically reactive sulfur, chemically reactive selenium and chemically reactive tellurium is less than 10 atomic parts per million.