Patent classifications
H01L23/296
Silicous film forming composition comprising block copolymer and method for producing siliceous film using same
According to the present invention, a siliceous film forming composition, which is capable of filling trenches having narrow widths and high aspect ratios and forming a thick film, can be provided. A siliceous film forming composition comprising: (a) a block copolymer comprising a linear and/or cyclic block A having a polysilane skeleton comprising 5 or more silicon and a block B having a polysilazane skeleton comprising 20 or more silicon, and (b) a solvent.
Semiconductor Device and Methods of Manufacture
In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.
SEMICONDUCTOR DEVICE
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.
Curing reactive silicone gel and use thereof
A curing reactive silicone gel is provided. The curing reactive silicone gel is obtained by primarily curing a composition containing the following components in a gel form and further having secondarily curing reactivity. (A) an organopolysiloxane having at least two curing reactive groups in one molecule; (B) optionally, an organohydrogenpolysiloxane; and (C) a curing agent.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device and a manufacturing method thereof are provided. The display device includes: a first array substrate, a first opposite substrate, a second array substrate and a second opposite substrate stacked in sequence; the first array substrate comprises a first overlap portion overlapping with the first opposite substrate, a first extension portion extending from the first overlap portion, and the second array substrate comprises a second overlap portion overlapping with the second opposite substrate, a second extension portion extending from the second overlap portion; a side, facing the second extension portion, of the first extension portion comprises a first control IC, and a side, away from the first extension portion, of the second extension portion comprises a second control IC; and a space between the first and the second extension portions is filled with a heat dissipation component at least in an area where the first control IC is.
SEMICONDUCTOR PACKAGE HAVING A CHIP CARRIER AND A METAL PLATE SIZED INDEPENDENTLY OF THE CHIP CARRIER
A semiconductor package includes: a carrier having a first side and a second side opposite the first side, the first side having a plurality of contact structures; a semiconductor die having a first side and a second side opposite the first side, the first side of the semiconductor die having a plurality of pads attached to the plurality of contact structures at the first side of the carrier; a metal plate attached to the second side of the semiconductor die, the metal plate having a size that is independent of the size of the carrier and based on an expected thermal load to be presented by the semiconductor die; and an encapsulant confined by the carrier and the metal plate and laterally surrounding an edge of the semiconductor die. Corresponding methods of production are also provided.
CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND METHOD FOR PRODUCING SAME
Provided is a curable silicone composition and applications thereof. The composition has hot-melt properties as a whole, superior workability and curing characteristics such as overmolding, as well as superior flexibility and stress relief properties of a cured product thereof, even when a relatively large amount of filler is blended. Also provided is a cured product with a relatively small coefficient of thermal expansion. A curable silicone composition, comprising: an organopolysiloxane resin where 20 mol % or more of the total siloxane units of the organopolysiloxane resin is siloxane units represented by SiO.sub.4/2; and one or more functional fillers. A vinyl (CH.sub.2—CH—) group content of curing reactive functional groups containing carbon-carbon double bonds is 0.05 to 1.50 mol % per 100 g of silicone component(s) in the composition.
SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE MANUFACTURING METHOD
A semiconductor module includes a semiconductor element made of a wide-bandgap semiconductor, the semiconductor element having an upper surface with an edge, a buffer member that covers the edge of the upper surface of the semiconductor element, and a sealing resin that seals the semiconductor element and the buffer member. The buffer member has a thickness equal to or larger than 50 μm.
Semiconductor device
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.
MOISTUREPROOFING CHIP ON FILM PACKAGE AND METHOD OF FABRICATING THE SAME
The present disclosure discloses a moistureproofing chip on film (COF) package for protecting the conductive pattern of the COF package against moisture. The moistureproofing COF package includes a base film having a conductive pattern formed on one surface thereof and having a solder resist formed on the conductive pattern, and a moistureproofing coating layer formed on the solder resist by coating and configured to block moisture from being delivered to the conductive pattern through the solder resist.