A semiconductor package includes a semiconductor chip and a polydimethylsiloxane (PDMS) layer that is provided on the semiconductor chip and of which upper surface is exposed to the outside. Since the semiconductor package may include the PDMS layer, heat emitting performance of the semiconductor package in a vacuum state may improve.

A thermosetting composition for use as an underfill material contains: a mono- or bifunctional acrylic compound; a thermo-radical polymerization initiator; silica; and an elastomer including a 1,2-vinyl group. The thermosetting composition is liquid and has a property of turning, when cured thermally, into a cured product having a relative dielectric constant of 3.2 or less at 25° C. and a dielectric loss tangent of 0.013 or less at 25° C.

A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, a shock-absorbing material over a profile of the sacrificial fuse element, and mold compound covering the semiconductor die, the conductor, and the shock-absorbing material, and partially covering the metallic pad and leads, with the metallic pad and the leads exposed on an outer surface of the semiconductor package. Either a glass transition temperature of the shock-absorbing material or a melting point of the shock-absorbing material is lower than a melting point of the conductor.

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

Provided is a curable silicone composition and uses thereof. The composition which has hot-melt properties, strongly adheres to poorly adhesive substrates, and is particularly superior in flexibility and toughness at high temperatures from room temperature to approximately 150° C. in cured products such as overmolding, in addition to providing a cured product that does not easily warp or become damaged even when integrally molded with a lead frame or the like. The composition comprises: (A) organopolysiloxane resin microparticles where 20 mol % or more of all siloxane units is siloxane units represented by RSiO.sub.3/2 where R is a monovalent hydrocarbon group; (B) a silatrane derivative or a carbasilatrane derivative; (C) a curing agent; and (D) a functional inorganic filler. The content of component (D) is 50% or more by volume relative to the overall composition. The composition is solid at 25° C. and has hot-melt properties at a temperature of 200° C. or lower.

Provided is a curable silicone composition and uses thereof. The composition has hot-melt properties, strongly adheres to difficult-to-adhere to base materials, is particularly superior in flexibility and toughness at high temperatures from room temperature to about 150° C. in cured products such as overmolding, and provides a cured product that does not easily warp or become damaged even when integrally molded with a lead frame or the like. The composition comprises: (A1) an organopolysiloxane resin having no hot-melt properties as a whole molecule and contains 20 mol % or more of a siloxane unit represented by SiO.sub.4/2, (A2) a liquid chain organopolysiloxane having at least two curing-reactive functional groups in the molecule, (B) a silatrane derivative or carbasilatrane derivative, (C) a curing agent, and (D) a functional inorganic filler. The content of component (D) is at least 10% by volume. The composition has hot-melt properties at a temperature of 200° C. or lower.

Provided is a curable silicone composition and applications thereof. The curable silicone composition has superior hot-melt properties and moldability, where the flexibility, toughness, and stress relief properties of a cured product obtained therefrom are not impaired even if a large amount of functional inorganic filler is blended in. The curable silicone composition comprises an organopolysiloxane resin component with a weight average molecular weight in a range of 2,000 to 15,000 and that contains a siloxane unit represented by SiO.sub.4/2 making up at least 20 mol % or more of the total siloxane units, and one or more functional fillers. The silicone resin component comprises a curing reactive functional group containing a carbon-carbon double bond, and of that curing reactive functional group, 0.05 to 1.50 mol vinyl (CH2═CH—) group is contained per 100 g of the silicone component. The curable silicone composition generally has hot-melt properties as a whole.

To provide Provided is a curable silicone composition and applications thereof. The curable silicone composition has hot-melt properties, excellent workability, and curing characteristics such as overmolding, and a cured product obtained therefrom does not become hard or brittle, even if left at a temperature of 150° C. or higher for a long time. A The curable silicone composition comprises: an organopolysiloxane resin component which is non-hot-meltable, comprises a siloxane unit represented by SiO.sub.4/2 making up at least 20 mol % or more of the total siloxane units, and has a mass loss of 2.0 mass % or less when exposed to 200° C. for 1 hour; a liquid straight-chain or branched chain organopolysiloxane; and a curing agent.

A chip package including a semiconductor chip is provided. The chip package may include a packaging material at least partially around the semiconductor chip with an opening extending from a top surface of the packaging material to the semiconductor chip and/or to an electrical contact structure contacting the semiconductor chip, and a thermally conductive material in the opening, wherein the thermally conductive material is configured to transfer heat from the semiconductor chip to an outside, wherein the thermally conductive material extends laterally at least partially over the top surface of the packaging material.

Hotmelt silicone compositions are provided including: (A) a resinous alkenyl group-containing organopolysiloxane component, in which the silicon atom-bonded organic groups do not include an epoxy group-containing organic group, wherein the resinous alkenyl group-containing organopolysiloxane component includes (A-1) a resinous alkenyl group-containing organopolysiloxane including at least two alkenyl groups per molecule and free from a (Ar.sub.2SiO.sub.2/2) unit, and (A-2) a resinous alkenyl group-containing organopolysiloxane including at least two alkenyl groups per molecule and at least one (Ar.sub.2SiO.sub.2/2) unit; (B) an organohydrogenpolysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule; and (C) a curing catalyst.

The resinous alkenyl group-containing organopolysiloxane (A-1) is included in an amount of about 5 mass % or more based on the total mass of all the organopolysiloxane components in the hotmelt silicone composition.