An optoelectronic component includes an optoelectronic semiconductor chip that generates primary radiation during intended operation of the semiconductor chip, which primary radiation is coupled out via an emission side of the semiconductor chip, an optical element on the emission side and including a plurality of transmission fields arranged laterally side by side, wherein each transmission field is individually and independently electrically controllable, the transmission fields each include an electrochromic material, the transmission fields are such that, by electrically driving a transmission field, the transmittance of the electrochromic material for a radiation coming from the direction of the semiconductor chip during operation is changed and transmittance of the optical element in the region of the respective transmission field is changed for the respective radiation.

A package substrate and method of manufacturing a package substrate and a semiconductor device package are provided. The package substrate includes a circuit layer, an optically-cured dielectric layer, a plurality of block layers and a sacrificial layer. The circuit layer includes a plurality of conductive pads. The optically-cured dielectric layer has an upper surface and a lower surface opposite to the upper surface. The optically-cured dielectric layer covers the circuit layer, and first surfaces of the conductive pads are at least partially exposed from the upper surface of the optically-cured dielectric layer. The block layers are respectively disposed on the first surfaces of the conductive pads exposed by the optically-cured dielectric layer. The sacrificial layer is disposed on the optically-cured dielectric layer and covering the block layers.

A semiconductor device according to the present embodiment comprises a semiconductor chip comprising a first face and a second face on an opposite side to the first face, and comprising a first electrode in the first face. A first metallic member comprises a first opposed face facing the first electrode and being larger in a profile than the first electrode, the first metallic member comprising a first protruded portion protruded from the first opposed face toward the first electrode and electrically connected to the first electrode. An insulating member coats the semiconductor chip and the first metallic member.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

Semiconductor devices may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Methods of making semiconductor devices may involve supporting a backside-biased semiconductor die supported above a substrate, a backside surface of the backside-biased semiconductor die being spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Systems may include a sensor device, a nontransitory memory device, and at least one semiconductor device operatively connected thereto. The at least one semiconductor device may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be electrically connected to ground by wire bonds extending to the substrate.

A package includes a corner, a device die, a molding material molding the device die therein, and a plurality of bonding features. The plurality of bonding features includes a corner bonding feature at the corner, wherein the corner bonding feature is elongated. The plurality of bonding features further includes an additional bonding feature, which is non-elongated.

A method of packaging a semiconductor device having a bond pad on a surface thereof includes forming a redistribution material electrically coupled to the bond pad, forming a dielectric material over the redistribution material, and removing a first portion of the dielectric material to expose a first portion of the redistribution material. Semiconductor packages may include a redistribution layer having a first portion adjacent and coupled to a first contact of the package, a second portion exposed by a first opening in a dielectric material, and a redistribution line electrically coupled to a first bond pad, the first portion, and the second portion. Such a package may be tested placing at least one probe needle in contact with at least one terminal of the package, providing a test signal from the probe needle to the package through the terminal, and detecting signals using the needle.

A PCB having a first surface and a second surface includes a trench extending through the PCB, a plurality of conductive traces on one or more sidewalls of the trench. The plurality of conductive traces extends through the PCB and may be arranged in pairs across from one another along at least a portion of the length of the trench. A first set of conductive contacts are arranged in a first zig-zag pattern around a perimeter of the trench. A second set of conductive contacts are arranged in a second zig-zag pattern around the perimeter of the trench. In some cases, the first and second zig-zag patterns are arranged with respect to one another around the perimeter of the trench in an alternating fashion. A chip package is also disclosed having a pin arrangement that couples to the corresponding arrangement of conductive contacts on the PCB.

A chip package is provided. The chip package includes a semiconductor chip having on a front side a first connecting pad and a second connecting pad, a carrier having a pad contact area and a recess, encapsulation material encapsulating the conductor chip, a first external connection that is free from or extends out of the encapsulation material, an electrically conductive clip, and a contact structure. The semiconductor chip is arranged with its front side facing the carrier with the first connecting pad over the recess and with the second connecting pad contacting the pad contact area. The clip is arranged over a back side of the semiconductor chip covering the semiconductor chip where it extends over the recess. The electrically conductive contact structure electrically conductively connects the first connecting pad with the first external connection.

A method for fabricating an integrated circuit device is disclosed. A substrate is provided and an integrated circuit area is formed on the substrate. The integrated circuit area includes a dielectric stack. A seal ring is formed in the dielectric stack and around a periphery of the integrated circuit area. A trench is formed around the seal ring and exposing a sidewall of the dielectric stack. The trench is formed within a scribe line. A moisture blocking layer is formed on the sidewall of the dielectric stack, thereby sealing a boundary between two adjacent dielectric films in the dielectric stack.