The present disclosure provides an electronic apparatus including a first surface, a second surface, a third surface, a plurality of conductive elements, and an encapsulant. The second surface is nonparallel to the first surface. The third surface is distinct from the first surface and the second surface. The plurality of conductive elements are exposed from the second surface. The encapsulant covers the third surface and exposes the first surface and the second surface.

According to one or more embodiments, a semiconductor package includes: a first semiconductor chip including an upper surface, a lower surface, and a side surface and including a chip pad provided on the upper surface; a first cover insulating layer covering the upper surface and the side surface of the first semiconductor chip; a first upper conductive layer extending along an upper surface of the first cover insulating layer and connected to the chip pad of the first semiconductor chip; a first side conductive layer extending along a side surface of the first cover insulating layer and connected to the first upper conductive layer; a second cover insulating layer covering the first upper conductive layer, the first side conductive layer, and the first cover insulating layer; and a first lower conductive layer extending along the lower surface of the first semiconductor chip and connected to the first side conductive layer.

A semiconductor package includes an antenna structure including an antenna member configured to transmit and receive a signal through the first surface in the dielectric layer, a connection via extending from the antenna member toward the second surface, and a ground member spaced apart from the connection via; a frame surrounding the side surface of the antenna structure; a first encapsulant covering at least a portion of the antenna structure and the frame; a redistribution structure on the second surface and including an insulating layer in contact with the antenna structure and the frame, and a redistribution conductor configured to be electrically connected to the ground member and the connection via in the insulating layer; a first semiconductor chip on the redistribution structure and electrically connected to the antenna member through the redistribution conductor; a second encapsulant encapsulating the first semiconductor chip on the redistribution structure; and a shielding layer surrounding a surface of the second encapsulant.

A package including a device die and an encapsulant is provided. The device die includes a semiconductor substrate, an interconnect structure, a conductive via, and a dielectric layer. The interconnect structure is disposed over the semiconductor substrate. The conductive via is disposed over and electrically coupled to the interconnect structure. The dielectric layer is disposed over the interconnect structure and laterally encapsulating the conductive via, wherein the dielectric layer includes a sidewall and a bottom surface facing the interconnect structure, and the sidewall of the dielectric layer is tilted with respect to the bottom surface of the dielectric layer. The encapsulant laterally encapsulates the device die.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first passivation layer, a first metal layer and a first semiconductor die. The first metal layer is embedded in the first passivation layer. The first metal layer defines a first through-hole. The first semiconductor die is disposed on the first passivation layer.

A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

A semiconductor device package includes a substrate, a first encapsulant and a second encapsulant. The substrate has an optical region and a surface-mount technology (SMT) device region. The first encapsulant includes a first portion disposed on the optical region and covers the optical region and a second portion disposed on the SMT device region and covers the SMT device region. The second encapsulant is disposed on the substrate and covers at least a portion of the second portion of the first encapsulant and a portion of the first portion of the first encapsulant.

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, and a molding member that surrounds the at least one semiconductor chip. The molding member includes fillers. Each of the fillers includes a core and a coating layer that surrounds the core. The core includes a non-electromagnetic material and the coating layer includes an electromagnetic material. The molding member includes regions respectively have different distributions of the fillers.