The embodiments of the present disclosure relate to a packaging method, a panel assembly, a wafer package and a chip package. The semiconductor device packaging method includes: providing at least one wafer including a first surface and a second surface opposite to each other and a side surface connecting the first surface and the second surface, the first surface being an active surface; forming a connection portion on the side surface of the at least one wafer around the wafer, the wafer and the connection portion forming a panel assembly, the connection portion includes a third surface on the same side of the first surface of the wafer and a fourth surface on the same side as the second surface of the wafer, the third surface and the first surface forming a to-be-processed surface of the panel assembly; and forming a first dielectric layer on the first surface of the wafer. The packaging method of the embodiments of the present disclosure may improve packaging efficiency and utilization of a wafer.

A chip scale package structure is provided. The chip scale package structure includes an image sensor chip and a chip. The image sensor chip includes a first redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the first redistribution layer. The chip includes a plurality of through silicon via (TSV) and a second redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the second redistribution layer. The area of the chip is smaller than that of the image sensor chip. The second redistribution layer of the chip bonds to the first redistribution layer of the image sensor chip.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

A chip scale package structure of heat-dissipating type is provided and includes a board, a die fixed on and electrically coupled to the board, a thermally conductive adhesive sheet adhered to the die, and a package body formed on the board. The die has a heat-output surface arranged away from the board. The thermally conductive adhesive sheet is connected to at least 50% of an area of the heat-output surface. The package body covers and is connected to the die and entire of the surrounding lateral surface of the thermally conductive adhesive sheet. The die is embedded in the board, the thermally conductive adhesive sheet, and the package body. The heat-dissipating surface of the thermally conductive adhesive sheet is exposed from the package body, and a thermal conductivity of the thermally conductive adhesive sheet is at least 150% of a thermal conductivity of the package body.

A packaged semiconductor device is provided. The packaged semiconductor device includes a semiconductor die affixed to a package substrate. A conductive connector is affixed to the package substrate. A collar is formed around a perimeter of the conductive connector at a conductive connector to package substrate transition. A reinforcement structure is embedded in the collar. The reinforcement structure substantially surrounds the conductive connector at the conductive connector to package substrate transition.

A semiconductor package element includes a die, a passive layer, a conductive structure and an encapsulation layer. The die includes a first surface, a second surface and a third surface. The second surface is opposite to the first surface. The third surface is connected between the first surface and the second surface. The passive layer is disposed on the first surface and formed with a hole. The conductive structure is electrically coupled to the die through the hole. The encapsulation layer covers the first surface and the third surface of the die, wherein the passive layer is embedded in the encapsulation layer, a portion of the conductive structure is embedded in the encapsulation layer, and the other portion of the conductive structure protrudes from an etched surface of the encapsulation layer, the etched surface is formed by plasma etching.

The invention describes a fabricating method for fabricating semiconductor package device which includes the following steps: providing a wafer having a plurality of dies, wherein each of the dies is provided on a top surface thereof with a middle electric conducting structure and a solder ball; forming a molding structure having a flat top surface on a top side of the wafer; removing a part of the molding structure and exposing a part of each of the solder ball by plasma etching; performing a dicing process along a boundary of each of the dies to separate each of the dies so that the semiconductor package device is thus obtained.

An embodiment is a method including depositing a first dielectric layer over a molding compound and a chip and patterning a first opening in the first dielectric layer to expose a contact of the chip. A first metallization layer is deposited over the first dielectric layer and in the first opening, where a portion of the first metallization layer in the first opening has a flat top. A second dielectric layer is deposited over the first metallization layer and the first dielectric layer. A second metallization layer is deposited in a second opening in the second dielectric layer, where the second metallization layer does not have a flat top within the second opening.

A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.