Disclosed is a packaging method for circuit units, wherein the circuit units comprise a silicon layer substrate and a silicon dioxide layer overlaid on the silicon layer substrate. The packaging method for a circuit unit comprises: attaching a plurality of circuit units to a circuit baseplate in a spaced and inverted mode, wherein the silicon dioxide layer is attached to the circuit baseplate, and the silicon layer substrate faces away from the circuit baseplate; forming an insulator between the circuit units; removing the silicon layer substrate to expose the silicon dioxide layer; and forming an electromagnetic shielding layer on the silicon dioxide layer and the insulator.

Disclosed is a packaging structure for circuit units, comprising: a circuit baseplate, wherein the circuit baseplate is provided thereon with a circuit unit, the circuit unit including a silicon dioxide layer and an electronic device arranged on the silicon dioxide layer; an insulator, wherein the insulator surrounds the circuit unit; and an electromagnetic shielding layer, wherein the electromagnetic shielding layer covers the circuit unit and the insulator.

A method for producing a power semiconductor system includes packaging a power device in plastic to form a power semiconductor component, forming a first heat dissipation face on a surface of the power semiconductor component; heating a first material between a first heat sink and the first heat dissipation face; and cooling the first material on the first heat dissipation face to connect the power semiconductor component and the first heat sink.

A semiconductor device has vertical contact fingers formed in a substrate having side portions that are flexible. Contact fingers are formed near one or more edges of the flexible side portions of the substrate. After semiconductor dies are mounted to and electrically coupled to the substrate, the semiconductor device may be encapsulated by placing the device in a mold chase including upper and lower mold plates. The lower mold plate is sized smaller than the substrate so that the flexible side portions of the substrate including the contact fingers fold vertically upward to fit within the mold.

A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; a printed circuit board provided over and electrically connected to the semiconductor chip; a first external connection terminal electrically connected to the conductive plate and extending upward from the conductive plate; a first conductive block provided to surround an outer circumference of the first external connection terminal in an insulated state; and a sealing member provided to seal the semiconductor chip, the printed circuit board, and the first conductive block.

A semiconductor package includes: a package substrate; a semiconductor chip mounted above the package substrate; a chip connection terminal interposed between the semiconductor chip and the package substrate; an adhesive layer disposed on the package substrate and that covers a side and a top surface of the semiconductor chip and surrounds the chip connection terminal between the semiconductor chip and the package substrate; a molding layer disposed on the package substrate and that surrounds the adhesive layer; an interposer mounted on the adhesive layer and the molding layer, where the interposer includes an interposer substrate; and a conductive pillar disposed on the package substrate, where the conductive pillar surrounds the side of the semiconductor substrate, penetrates the molding layer in a vertical direction and connects the package substrate to the interposer substrate.

A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) layer, and a lid structure. The package structure is disposed on the substrate. The TIM layer is disposed on the package structure. The TIM layer includes a liquid state metal material. The lid structure is disposed on the substrate and the TIM layer. The lid structure includes a trench facing the package structure. At least a portion of the TIM layer is located in the trench.

A semiconductor package device, a wearable device, and a temperature detection method are provided. The semiconductor package includes a substrate, an optical module, and a temperature module. The optical module is disposed on the substrate. The temperature module is disposed on the substrate and adjacent to the optical module. The temperature module comprises a semiconductor element and a temperature sensor stacked on the semiconductor element. The optical module is configured to detect a distance between the optical module and an object.

A semiconductor package includes a semiconductor substrate forming a cavity and a redistribution layer on a first side of the semiconductor substrate, the redistribution layer forming die contacts within the cavity and a set of terminals for the semiconductor package opposite the semiconductor substrate. The redistribution layer electrically connects one or more of the die contacts to the set of terminals. The semiconductor package further includes a semiconductor die including die terminals within the cavity with the die terminals electrically coupled to the die contacts within the cavity.

An antenna apparatus comprises a semiconductor die in a molding compound layer, a first through via is between a sidewall of the semiconductor die and a sidewall of the molding compound layer and an antenna structure over the molding compound layer, wherein a first portion of the antenna structure is directly over a top surface of the semiconductor die and a second portion of the antenna structure is directly over a top surface of the first through via.