Patent classifications
H01L23/3121
Photonic integrated package and method forming same
A method includes placing an electronic die and a photonic die over a carrier, with a back surface of the electronic die and a front surface of the photonic die facing the carrier. The method further includes encapsulating the electronic die and the photonic die in an encapsulant, planarizing the encapsulant until an electrical connector of the electronic die and a conductive feature of the photonic die are revealed, and forming redistribution lines over the encapsulant. The redistribution lines electrically connect the electronic die to the photonic die. An optical coupler is attached to the photonic die. An optical fiber attached to the optical coupler is configured to optically couple to the photonic die.
Integrated circuit package and method
In an embodiment, a package includes: a first redistribution structure; a first integrated circuit die connected to the first redistribution structure; a ring-shaped substrate surrounding the first integrated circuit die, the ring-shaped substrate connected to the first redistribution structure, the ring-shaped substrate including a core and conductive vias extending through the core; a encapsulant surrounding the ring-shaped substrate and the first integrated circuit die, the encapsulant extending through the ring-shaped substrate; and a second redistribution structure on the encapsulant, the second redistribution structure connected to the first redistribution structure through the conductive vias of the ring-shaped substrate.
Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device is a substrate inserted lead-type semiconductor device to be mounted through insertion of a plurality of lead terminals into a plurality of respective through holes of a substrate. The semiconductor device includes: an energization controller including a semiconductor element and wiring; a sealing resin to cover the energization controller; and the lead terminals each having one end side connected to the energization controller and the other end side protruding from the sealing resin. The lead terminals each have a protrusion formed on a part of the other end side protruding from the sealing resin.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE
A semiconductor chip is arranged on a region of laser direct structuring (LDS) material of a laminar substrate. The semiconductor chip has a front active area facing towards, and a metallized back surface facing away from, the laminar substrate. An encapsulation of LDS material on the laminar substrate encapsulates the semiconductor chip with the metallized back surface of the semiconductor chip exposed at an outer surface of the encapsulation of LDS material. Electrically conductive lines and first vias are structured in the region of LDS material to electrically connect to the front active area of the semiconductor chip. A thermally conductive layer is plated over the outer surface of the encapsulation of LDS material in contact with the metallized back surface of the semiconductor chip. A heat extractor body of thermally conductive material is coupled in heat transfer relationship with the thermally conductive layer.
PACKAGE COMPRISING INTEGRATED DEVICES COUPLED THROUGH A METALLIZATION LAYER
A package comprising a first integrated device comprising a plurality of first pillar interconnects; an encapsulation layer at least partially encapsulating the first integrated device; a metallization portion located over the first integrated device and the encapsulation layer, wherein the metallization portion includes at least one passivation layer and a plurality of metallization layer interconnects, wherein the plurality of first pillar interconnects is coupled to the plurality of metallization layer interconnects; and a second integrated device comprising a plurality of second pillar interconnects, wherein the second integrated device is coupled to the plurality of metallization layer interconnects through a plurality of second pillar interconnects and a plurality of solder interconnects.
SEMICONDUCTOR DEVICE PACKAGING WARPAGE CONTROL
A method of manufacturing a packaged semiconductor device is provided. The method includes placing a plurality of semiconductor die on a carrier substrate. The plurality of semiconductor die and an exposed portion of the carrier substrate are encapsulated with an encapsulant. A cooling fixture includes a plurality of nozzles and is placed over the encapsulant. The encapsulant is cooled by way of air exiting the plurality of nozzles. A property of air exiting a first nozzle of the plurality of nozzles is different from that of a second nozzle of the plurality of nozzles.
SEMICONDUCTOR PACKAGE
A semiconductor package includes a first semiconductor chip including a first semiconductor substrate and a first chip pad on a first bottom surface of the first semiconductor substrate, a second semiconductor chip including a second semiconductor substrate and a second chip pad on a second top surface of the second semiconductor substrate, a lower redistribution structure provided under the first semiconductor chip and the second semiconductor chip, the lower redistribution structure including a lower redistribution pattern, the lower redistribution pattern including a first lower redistribution via pattern contacting the first chip pad, a molding layer covering the first semiconductor chip and the second semiconductor chip, an upper redistribution structure including an upper redistribution pattern, the upper redistribution pattern including a first upper redistribution via pattern connected to the second chip pad, and a conductive connection structure electrically connecting the lower redistribution pattern to the upper redistribution pattern.
SEMICONDUCTOR PACKAGE
A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, the semiconductor chip including a logic chip and a memory stack structure on the logic chip, a connector and a connector terminal below the package substrate, a molding layer that covers the semiconductor chip, the molding layer having a recess region on a top surface of the molding layer, a housing that covers the molding layer, and an air gap on the semiconductor chip, the air gap being defined by the housing and the recess region of the molding layer, and the molding layer separating the air gap from the memory stack structure of the semiconductor chip.
Encapsulated flexible electronics for long-term implantation
Provided are methods of making a long-term implantable electronic device, and related implantable devices, including by providing a substrate having a first encapsulation layer that covers at least a portion of the substrate, the first encapsulation layer having a receiving surface; providing one or more electronic devices on the first encapsulation layer receiving surface; and removing at least a portion of the substrate from the first encapsulation layer; thereby making the long-term implantable electronic device. Further desirable properties, including device lifetime increases during use in environments that are challenging for sensitive electronic device components, are achieved through the use of additional layers such as longevity-extending layers and/or ion-barrier layers in combination with an encapsulation layer.
Flex-foil package with coplanar topology for high-frequency signals
The invention relates to a foil-based package with at least one foil substrate having an electrically conductive layer arranged thereon which is patterned to provide a first electrically conducting portion and a second electrically conducting portion, which is coplanar to the first electrically conducting portion, and a third electrically conducting portion, which is coplanar to the first electrically conducting portion, the first electrically conducting portion being arranged between the second and third electrically conducting portions. In accordance with the invention, the first electrically conducting portion is implemented to be a signal-guiding waveguide for high-frequency signals and the second electrically conducting portion, which is coplanar to the first electrically conducting portion, and the third electrically conducting portion, which is coplanar to the first electrically conducting portion, form an equipotential surface.