The disclosure provides a chip package and an electronic device. The chip package includes: a package substrate, a semiconductor substrate provided on the package substrate and a first chip and a second chip provided on the semiconductor substrate. The semiconductor substrate includes a first group of pins and a second group of pins arranged on the semiconductor substrate and a connecting layer located between the first group of pins and the second group of pins. The connecting layer has a plurality of connecting channels, and the first group of pins and the second group of pins are connected through the plurality of connecting channels. The first chip has a third group of pins, the second chip has a fourth group of pins, and the third group of pins are connected to the first group of pins, and the fourth group of pins are connected to the second group of pins.

A method of manufacturing a semiconductor structure includes the following operations. A wafer includes a crystal orientation represented by a family of Miller indices comprising <lmn>, wherein l.sup.2+m.sup.2+n.sup.2=1. A first chip and a second chip are over the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. A first included angle between the first direction and the crystal orientation is greater than or equal to 0 degree and less than 45 degrees.

An electronic package is formed by disposing an electronic element and a lead frame having a plurality of conductive posts on a carrier structure having an antenna function, and encapsulating the electronic element and the lead frame with an encapsulant. The encapsulant is defined with a first encapsulating portion and a second encapsulating portion lower than the first encapsulating portion. The electronic element is positioned in the first encapsulating portion, and the plurality of conductive posts are positioned in the second encapsulating portion. End surfaces of the plurality of conductive posts are exposed from a surface of the second encapsulating portion so as to be electrically connected to a connector.

Disclosed is an apparatus including a molded multi-die high density interconnect including: a bridge die having a first plurality of interconnects and second plurality of interconnects. The apparatus also includes a first die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the first plurality of interconnects of the bridge die. The apparatus also includes a second die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the second plurality of interconnects of the bridge die. The coupled second plurality of contacts and interconnects have a smaller height than the first plurality of contacts of the first die and second die.

An apparatus and method for providing an artificial standoff to the bottom of leads on a QFN device sufficient to provide a gap that changes the fluid dynamics of solder flow and create a unique capillary effect that drives solder up the of leads of a QFN device when it is attached to a printed wiring board (PWB).

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

A semiconductor device package includes a carrier and an encapsulant disposed on the carrier. At least one portion of the encapsulant is spaced from the carrier by a space.

A package structure and a manufacturing method for the same are provided. The package structure includes a circuit, a mold sealing layer, a conductive metal board, and a conductive layer. The circuit board includes a substrate and a first electronic element disposed on the substrate. The mold sealing layer is disposed on the substrate and covers the first electronic element. The mold sealing layer has a top surface, a bottom surface corresponding to the top surface, and a side surface connected between the top surface and the bottom surface. The conductive metal board is disposed on the top surface and adjacent to the first electronic element. The conductive layer is disposed on the side surface and electrically connected to the conductive metal board. The conductive metal board and the conductive layer are each an independent component.

A pattern of microchannels is formed on a major surface of a substrate on the side opposite an adhesive surface thereof. Through holes extend through the substrate and are connected to the pattern of microchannels. Solid circuit dies are adhesively bonded to the adhesive surface of the substrate. The contact pads of the solid circuit dies at least partially overlie and face the through holes. Electrically conductive channel traces are formed to electrically connect to the solid circuit dies via the through holes.

A power semiconductor module includes: first and second substrates; at least one power semiconductor die arranged between and thermally coupled to a first side of each substrate, and electrically coupled to the first side of the first substrate; at least one rivet having a first end arranged on and electrically coupled to the first side of the first substrate; and an encapsulant encapsulating the at least one power semiconductor die, the at least one rivet and the substrates. At least parts of a second side of the substrates are exposed from the encapsulant. A second end of the at least one rivet is exposed at the encapsulant and configured to accept a press fit pin such that the at least one power semiconductor die can be electrically contacted from the outside.