Package structures and methods for forming the same are provided. The package structure includes an integrated circuit die and a package layer surrounding the integrated circuit die. The package structure also includes a redistribution structure over the package layer and electrically connected to the integrated circuit die. The redistribution structure includes a passivation layer and a conductive layer formed in the passivation layer. The integrated circuit die further includes a connector formed over the conductive layer and covered a top surface of the passivation layer. In addition, a bottom surface of the connector and a top surface of the connector are both wider than a neck portion of the connector.

A semiconductor device is disclosed. The semiconductor device includes a first die on a first substrate, a second die on a second substrate separate from the first substrate, a transmission line in a redistribution layer on a wafer, and a magnetic structure surrounds the transmission line. The first transmission line electrically connects the first die and the second die. The magnetic structure is configured to increase the characteristic impedance of the transmission line, which can save the current and power consumption of a current mirror and amplifier in a 3D IC chip-on-wafer-on-substrate (CoWoS) semiconductor package.

Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is exposed; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a protection layer including a plurality of beads embedded within a top region of the polymeric gel.

In an embodiment, a device includes: a processor die including circuit blocks, the circuit blocks including active devices of a first technology node; a power gating die including power semiconductor devices of a second technology node, the second technology node larger than the first technology node; and a first redistribution structure including first metallization patterns, the first metallization patterns including power supply source lines and power supply ground lines, where a first subset of the circuit blocks is electrically coupled to the power supply source lines and the power supply ground lines through the power semiconductor devices, and a second subset of the circuit blocks is permanently electrically coupled to the power supply source lines and the power supply ground lines.

An integrated circuit package is formed by positioning an integrated circuit die on a die pad of a leadframe; connecting a bond wire between the die and a bond pad of the leadframe; encapsulating the bond wire, die, and bond pad with an encapsulant material to form a first mold cap of the integrated circuit package; after the encapsulating, bending one or more leads of the leadframe to form one or more bent leads; and encapsulating the first mold cap and a portion of a bend of the one or more bent leads with the encapsulant material to form a second mold cap.

The present invention provides a package structure and a method for manufacturing the same. The package structure includes at least two electrical elements, a second reconstruction layer, and a metal lead frame, wherein at least one of the electrical elements is a chip, at least one of the electrical elements has a first reconstruction layer, and the second reconstruction layer has a smaller pin pitch than that of the metal lead frame; the second reconstruction layer has a first surface and a second surface, a functional surface of the electrical element is disposed on and connected to the first surface, and at least one of the electrical elements is connected to the second reconstruction layer; and the second surface is disposed on and connected to the metal lead frame. A fan-out package structure is formed on the metal lead frame, which improves the heat dissipation capacity of the chip.

The present disclosure provides a semiconductor device package including a substrate having a first surface and a second surface opposite to the first surface, a first package body disposed on the first surface, and a conductive layer covering the first package body and the substrate. The conductive layer includes a first portion on the top surface of the first package body and a second portion on the lateral surface of the first package body and a sidewall of the substrate. The second portion of the conductive layer has a tapered shape. A method for manufacturing a semiconductor device package is also provided.

A semiconductor package includes a first semiconductor chip, a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip, and an insulating adhesive layer between the first semiconductor chip, and each of the plurality of second semiconductor chips, each of the plurality second conductor chips, and the insulating adhesive layer including an adhesive fillet protruding from between at least the first semiconductor chip and each of the plurality of second semiconductor chips, wherein a grooving recess is defined by the first semiconductor chip, the plurality of second semiconductor chips, and the insulating adhesive layer, the grooving recess including a first recess and a second recess adjacent to the first recess, an uppermost surface of the adhesive fillet and the first semiconductor chip defines the first recess, and an uppermost surface of the first semiconductor chip to a surface inside the first semiconductor chip defines the second recess.

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, the semiconductor chip including a logic chip and a memory stack structure on the logic chip, a connector and a connector terminal below the package substrate, a molding layer that covers the semiconductor chip, the molding layer having a recess region on a top surface of the molding layer, a housing that covers the molding layer, and an air gap on the semiconductor chip, the air gap being defined by the housing and the recess region of the molding layer, and the molding layer separating the air gap from the memory stack structure of the semiconductor chip.