A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The first side of the substrate is attached to a carrier. The substrate is thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the substrate. A device die is bonded to the second connectors. The substrate is singulated into multiple packages.

A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

Embodiments include an electronic package and methods of forming an electronic package. In an embodiment, the electronic package comprises a substrate, and a plurality of conductive features formed over the substrate. In an embodiment, a bilayer build-up layer is formed over the plurality of conductive features. In an embodiment, the bilayer build-up layer comprises a first dielectric layer and a second dielectric layer. In an embodiment, a surface of the first dielectric layer comprises depressions. In an embodiment, the second dielectric layer is disposed in the depressions of the surface of the first dielectric layer.

A semiconductor package including a package substrate, a connection substrate on the package substrate and having on a lower corner of the connection substrate a recession that faces a top surface of the package substrate, a semiconductor chip on the connection substrate, a plurality of first connection terminals connecting the connection substrate to the semiconductor chip, and a plurality of second connection terminals connecting the package substrate to the connection substrate. The recession is laterally spaced apart from the second connection terminals.

A semiconductor package provided herein includes a first semiconductor die, a second semiconductor die and an insulating encapsulation. The second semiconductor die is stacked on the first semiconductor die. The insulating encapsulation laterally surrounds the first semiconductor die and the second semiconductor die in a one-piece form, and has a first sidewall and a second sidewall respectively adjacent to the first semiconductor die and the second semiconductor die. The first sidewall keeps a lateral distance from the second sidewall.

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

Disclosed is a method for packaging a chip, comprising the following steps: providing a baseplate formed with an open slot thereon penetrating through opposite sides of the baseplate; providing a release base material, wherein the release base material is bonded to a first side of the baseplate and covers the open slot; providing a chip, wherein the chip is mounted on the release base material at the position of the open slot; packaging a second side of the baseplate facing away from the release base material so as to form a packaging layer which packages the chip and fixes it on the baseplate; removing the release base material so as to obtain a package structure for the chip.

A semiconductor package includes an upper substrate having a first surface and a second surface which are opposite to each other, a lower semiconductor chip disposed on the first surface of the upper substrate, a plurality of conductive pillars disposed on the first surface of the upper substrate at at least one side of the lower semiconductor chip, and an upper semiconductor chip disposed on the second surface of the upper substrate. The lower semiconductor chip and the plurality of conductive pillars are connected to the first surface of the upper substrate, and the upper semiconductor chip is connected to the second surface of the upper substrate.

The present description relates to a method of manufacturing an interconnection structure of an integrated circuit intended to be encapsulated in an encapsulation resin in contact with a first surface of a protection layer. The protection layer is resting on a first surface of the interconnection structure. The interconnection structure comprising copper interconnection elements extending at least partly through an insulating layer and flush with the first surface of said interconnection structure. The manufacturing method includes a step of structuring of the protection layer or a step of forming of the protection layer with a structuring. The structuring step or the forming step is adapted to structuring the first surface of the protection layer in the form of an alternation of ridges and troughs.

Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.