H01L23/3135

Semiconductor package structure
11710688 · 2023-07-25 · ·

A semiconductor package structure includes a frontside redistribution layer, a stacking structure, a backside redistribution layer, a first intellectual property (IP) core, and a second IP core. The stacking structure is disposed over the frontside redistribution layer and comprises a first semiconductor die and a second semiconductor die over the first semiconductor die. The backside redistribution layer is disposed over the stacking structure. The first IP core is disposed in the stacking structure and is electrically coupled to the frontside redistribution layer through a first routing channel. The second IP core is disposed in the stacking structure and is electrically coupled to the backside redistribution layer through a second routing channel, wherein the second routing channel is separated from the first routing channel and electrically insulated from the frontside redistribution layer.

SEMICONDUCTOR CHIP PACKAGE AND FABRICATION METHOD THEREOF
20230005808 · 2023-01-05 · ·

A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

MEMORY SYSTEM

According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND POWER CONVERSION APPARATUS
20230238295 · 2023-07-27 · ·

An object is to provide a technique which suppresses peeling between a sealing resin and a semiconductor element while suppressing a decrease in productivity and an increase in manufacturing cost in a semiconductor device. A semiconductor device includes a semiconductor element, and a sealing resin sealing the semiconductor element. The semiconductor element includes a cell region through which a main current flows, a terminal region provided on an outer peripheral side of the cell region, and a protective film covering an upper surface of an outer peripheral portion of the terminal region. The protective film includes spread portions spreading to outermost ends at four corners of the semiconductor element. The spread portions have a cut section continuous with a cut section of the terminal region, and do not spread to the outermost ends in four sides excluding the four corners of the semiconductor element.

Semiconductor package design for solder joint reliability
11569144 · 2023-01-31 · ·

Embodiments described herein provide techniques for using a stress absorption material to improve solder joint reliability in semiconductor packages and packaged systems. One technique produces a semiconductor package that includes a die on a substrate, where the die has a first surface, a second surface opposite the first surface, and a sidewall surface coupling the first surface to the second surface. The semiconductor package further includes a stress absorption material contacting the sidewall surface of the die and a molding compound separated from the sidewall surface of the die by the stress absorption material. The Young's modulus of the stress absorption material is lower than the Young's modulus of the molding compound. One example of a stress absorption material is a photoresist.

Package structure and method of fabricating the same

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

Chip to chip interconnect in encapsulant of molded semiconductor package

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

Process for conformal coating of multi-row surface-mount components in a lidless BGA package and product made thereby

A process for conformally coating passive surface mount components soldered to a printed circuit substrate of a lidless flip-chip ball grid array package includes affixing a stiffener ring to the substrate before forming a conformal coating on the passive surface mount components. The stiffener ring is affixed to the substrate so that the plurality of passive surface mount components and the integrated circuit die are contained within an opening formed by the stiffener ring. After affixing the stiffener ring to the substrate, the conformal coating is formed on the passive surface mount components. The conformal coating extends over each of the passive surface mount components, around a periphery of each of the passive surface mount components, and under each of the passive surface mount components. A product made according to the process is also disclosed.

Methods of forming integrated circuit packages having adhesion layers over through vias

In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

INTEGRATED CIRCUIT PACKAGE HAVING WIREBONDED MULTI-DIE STACK
20230023328 · 2023-01-26 ·

Embodiments of the present disclosure are directed towards an integrated circuit (IC) package including a first die at least partially embedded in a first encapsulation layer and a second die at least partially embedded in a second encapsulation layer. The first die may have a first plurality of die-level interconnect structures disposed at a first side of the first encapsulation layer. The IC package may also include a plurality of electrical routing features at least partially embedded in the first encapsulation layer and configured to route electrical signals between a first and second side of the first encapsulation layer. The second side may be disposed opposite to the first side. The second die may have a second plurality of die-level interconnect structures that may be electrically coupled with at least a subset of the plurality of electrical routing features by bonding wires.