A device comprising a connecting plate and a circuit element is disclosed. The circuit element is electrically coupled to the connecting plate through a solder connection including a plurality of solder balls disposed between the circuit element and the connecting plate. An underfill layer is formed between the circuit element and the connecting plate and configured to provide bonding between the circuit element and the connecting plate. The solder connection includes a first solder area with a first solder ball density and a second solder area with a second solder ball density. The first solder ball density is less than the second solder ball density. The underfill layer includes a bonding material continuously disposed in the second solder area of the solder connection.

A semiconductor apparatus that ensures heat dissipation using a heat dissipating member with multiple fins formed by folding a metal plate, a manufacturing method for the semiconductor apparatus, and a power converter are obtained. The semiconductor device is bonded to a lead frame. The lead frame is provided on an insulating layer and a metal base plate is provided on the face opposite to the face of the insulating layer on which the semiconductor device is bonded. The semiconductor device, the lead frame, the insulating layer, and the metal base plate are sealed with a sealing member in such a way that a portion of the lead frame and a portion of the metal base plate are exposed. The exposed portion of the metal base plate exposed from the sealing member is inserted in an opening of a support frame. A heat dissipating member is bonded to both the metal base plate and the support frame.

In some examples, a semiconductor package comprises a semiconductor die; an operational component on an active surface of the semiconductor die; and a cover coupled to the active surface of the semiconductor die and covering the operational component. The cover comprises a monolithic structure including a vertical portion and a horizontal portion. A hollow area is between the cover and the operational component. The package also includes a mold compound covering the semiconductor die and the cover.

The present disclosure provides a semiconductor a semiconductor device package includes a substrate, an electronic component disposed on the substrate, a package body disposed on the substrate and encapsulating the electronic component, and a capacitor disposed above the electronic component. The capacitor is exposed from the package body.

A semiconductor package structure is provided. The semiconductor package structure includes a redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. An antenna structure includes a first antenna element formed in the RDL structure, a first insulating layer covering the RDL structure, a second insulating layer formed on the first insulating layer, and a second antenna element formed on and in direct contact with the second insulating layer.

A semiconductor package structure includes a package substrate, an encapsulant, at least one passage and at least one semiconductor element. The encapsulant is disposed on the package substrate and has a peripheral surface, and includes a first encapsulant portion and a second encapsulant portion spaced apart from the first encapsulant portion. The at least one passage is defined by the first encapsulant portion and the second encapsulant portion, and the passage has at least one opening in the peripheral surface of the encapsulant. The at least one semiconductor element is disposed on the package substrate and exposed in the passage.

Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a base substrate. The base substrate may have a plurality of through substrate vias. In an embodiment, a first die is over the base substrate. In an embodiment a first cavity is disposed into the base substrate. In an embodiment, the first cavity is at least partially within a footprint of the first die. In an embodiment, a first component is in the first cavity.

A method comprises removing a portion of molding compound from a side of a package structure by a laser ablation process to create an opening that exposes a portion of a conductive clip, depositing solder paste on the exposed portion of the conductive clip, and reflowing the solder paste. The laser ablation process in one example is a pulsed laser ablation process that includes raster scanning a laser along a portion of the side of the package structure to create the opening. Depositing the solder paste in one example includes performing a dispense process or a screening process that deposits solder paste in the opening onto the exposed portion of the conductive clip.

Integrated circuit packaging with cavities and methods of manufacturing the same are disclosed. An example apparatus includes a semiconductor die and a housing enclosing portions of the semiconductor die. The housing defines an opening that extends from a surface of the semiconductor die to an external environment, the housing formed of a first material. The example apparatus includes a second material disposed within the opening to block exposure of the semiconductor die to the external environment.

A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.