A power semiconductor module includes a carrier comprising a first side and an opposite second side, a power semiconductor die arranged at the first side of the carrier, and a housing arranged at least partially on the second side of the carrier and forming a joining site for a cooler on the second side. The joining site completely surrounds an inner portion of the second side of the carrier. The inner portion is configured to be in direct contact with a cooling fluid within the cooler.

A region of a sealing part is effectively utilized. -A semiconductor device includes a semiconductor element, a substrate, a sealing part, and a cavity region. The substrate included in this semiconductor device is disposed adjacent to a bottom surface of the semiconductor element. The sealing part included in this semiconductor device is formed in a shape that covers an upper surface that is a surface facing the bottom surface of the semiconductor element, and seals the semiconductor element. The cavity region included in this semiconductor device is a region disposed in the sealing part and formed with a cavity.

An electronic element housing package includes a base and a lead frame. The base is made of resin. The lead frame includes a portion positioned inside the base and another portion exposed from the base. The base includes a recess including a step portion. The lead frame includes a lead surface, a first extension portion, and a second extension portion. The lead surface is exposed at the step portion and has a first side and a second side. The first extension portion extends outward from the lead surface beyond the first side. The first extension portion is positioned inside the base. The second extension portion extends outward from the lead surface beyond the second side. The second extension portion is positioned inside the base. The first side and the second side are two sides not facing one another.

A package structure of an air gap type semiconductor device includes a carrier; a semiconductor chip; and a bonding layer disposed between the carrier and the semiconductor chip. A first cavity is formed in the bonding layer and enclosed by the semiconductor chip and the carrier to at least aligned with a portion of an active region of the semiconductor chip. An encapsulation layer and the bonding layer are on a same side of the carrier to encapsulate the semiconductor chip and an exposed region of the bonding layer. At least one portion of the encapsulation layer is formed between the semiconductor chip and the carrier along a direction perpendicular to a lateral surface of the carrier. Interconnection structures formed on a side of the carrier different from a side with the bonding layer. Each interconnection structure is electrically connected to a corresponding input/output electrode of the semiconductor chip.

A package includes an integrated circuit, IC, die having circuitry configured to generate signalling for transmission to a waveguide and/or receive signalling from a waveguide via a launcher. The die is coupled to an interconnect layer extending out from a footprint of the die. The launcher is formed in a launcher-substrate, separate from the die. The launcher is coupled to the die to pass the signalling therebetween by a connection in the interconnect layer. The launcher includes a launcher element mounted in a first plane within the launcher-substrate and a waveguide-cavity including a ground plane arranged opposed to and spaced from the first plane. The waveguide-cavity is further defined by at least one side wall extending from the ground plane towards the first plane. The die and launcher are at least partially surrounded by mould material of the package.

A semiconductor package includes a first substrate, a semiconductor chip disposed on the first substrate, a mold layer disposed on the first substrate and at least partially covering the semiconductor chip, and a heat dissipation structure disposed on a first top surface of the semiconductor chip and in the mold layer. The heat dissipation structure covers an inner side surface of the mold layer. A surface roughness of the first top surface of the semiconductor chip is greater than a surface roughness of a side surface of the semiconductor chip, and a surface roughness of the inner side surface of the mold layer is greater than a surface roughness of a top surface of the mold layer. The heat dissipation structure includes voids therein.

A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

A surface acoustic wave (SAW) filter package structure includes a dielectric substrate having a dielectric layer, a first patterned conductive layer, a second patterned conductive layer, and a conductive connection layer. The conductive connection layer is electrically connected between the first patterned conductive layer and the second patterned conductive layer, which are disposed at opposite sides of the dielectric layer. The second patterned conductive layer has a finger electrode portion. An active surface of a chip is faced toward the finger electrode portion. A polymer sealing frame is disposed between the chip and the dielectric substrate and surrounds the periphery of the chip to form a chamber together with the chip and the dielectric substrate. The mold sealing layer is disposed on the dielectric substrate and covers the chip and the polymer sealing frame. A manufacturing method of the SAW filter package structure is also disclosed.

An electronic device includes a carrier substrate with an electronic IC chip mounted on top of the carrier substrate. An encapsulation block on top of the front face of the carrier substrate embeds the IC chip. The encapsulation block has a through-void for positioning and confinement that extends through the encapsulation block to the top of the carrier substrate. At least one electronic component is positioned within the through-void and mounted to the top of the carrier substrate. Solder bumps or pads are located within the through-void to electrically connect the at least one electronic component to the carrier substrate.

A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.