An integrated circuit (IC) includes a substrate including circuitry configured for a function, the circuitry including at least one stress sensitive circuit portion, with at least a portion of nodes in the circuitry electrically coupled to bond pads provided by a top metal layer. A metal wall that is ring-shaped is positioned above the top metal layer that is not electrically coupled to the circuitry. The stress sensitive circuit portion is with at least a majority of its area within an inner area of the substrate that is framed by the metal wall to provide a cavity.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a carrier, a first encapsulant, and an interposer. The first encapsulant is on the carrier and defines a cavity. The interposer is disposed between the first encapsulant and the cavity. The first encapsulant covers a portion of the interposer.

The present disclosure provides a semiconductor a semiconductor device package includes a substrate, an electronic component disposed on the substrate, a package body disposed on the substrate and encapsulating the electronic component, and a capacitor disposed above the electronic component. The capacitor is exposed from the package body.

A packaged power semiconductor device is provided. The packaged power semiconductor device may include: a direct bonded copper (DBC) substrate configured to include an upper surface in which an upper region, a middle region, and a lower region are defined; a metal tab formed to be directly connected to the upper surface in the upper region; a first lead formed to be directly connected to the upper surface in the lower region; and a semiconductor chip formed on the upper surface in the middle region.

According to one embodiment, a semiconductor device includes a plurality of stacked semiconductor chips each of which has a first surface having an electrode formed thereon, a plurality of wires each of which has one end portion connected to each of the electrodes of the plurality of semiconductor chips and extends in a stacking direction of the semiconductor chips, a sealing resin that covers the plurality of semiconductor chips, has a second surface having recesses formed therein, and is formed so that the other end portions of the plurality of wires and the recesses overlap each other when viewed from the stacking direction, and a plurality of terminals that is provided so as to fill the recesses, each of which has one end portion connected to the other end portion of each of the plurality of wires and has the other end portion exposed from the sealing resin.

A device comprises a first sealing member, a second sealing member, a first circuit member and a second circuit member. The first sealing member comprises, as a base thereof, a first film formed of a film and comprises a conductive portion made of conductor. The device is formed with a closed space. The closed space is enclosed by the first sealing member and the second sealing member and is shut off from an outer space located outside the device. The first circuit member and the second circuit member are shut in the closed space and comprise a first contact point and a second contact point, respectively. At least one of the first circuit member and the second circuit member comprises an electrode. The conductive portion is in contact with the electrode in the closed space and is partially exposed to the outer space located outside the device.

A device comprises a first sealing member, a second sealing member, a first circuit member and a second circuit member. The first sealing member basically comprises a first film formed with an opening and comprises a frame film. At least one of the first circuit member and the second circuit member comprises an exposed portion and a seal portion which surrounds the exposed portion. The frame film has a film-seal portion and a circuit-seal portion. The film-seal portion is bonded to the first film to surround the opening. The circuit-seal portion is bonded to the seal portion to surround the exposes portion. The device is formed with a closed space which is enclosed by the first sealing member and the second sealing member. The exposed portion is exposed to the outer space located outside the device.

A semiconductor device comprises a substrate having a substrate top side, a substrate lateral side, and a substrate bottom side, an electronic device on the substrate top side, and an encapsulant on the substrate top side and contacting a lateral surface of the electronic device. The substrate comprises a conductive structure and a dielectric structure that extends comprising a protrusion in contact with the encapsulant. The conductive structure comprises a lead comprising a lead flank, the lead flank comprising a cavity and a conductive coating on a surface of the lead in the cavity. The conductive structure comprises a pad exposed at the substrate top side, embedded in the dielectric structure, and adjacent to the protrusion, to electrically couple with the electronic device via a first internal interconnect. Other examples and related methods are also disclosed herein.

A semiconductor package includes an IC having circuitry configured for at least one function with some nodes connected to bond pads, with first metal posts on the bond pads, and dome support metal posts configured in a ring having a top rim defining an inner cavity with solder on the top rim and extending over an area of the inner cavity for providing a solder dome that covers the inner cavity to provide a covered air cavity over a portion of the circuitry. A leadframe includes a plurality of leads or lead terminals. The IC is flipchip attached with a solder connection to the leadframe so that the first metal posts are attached to the leads or the lead terminals. A mold compound provides encapsulation for the semiconductor package except on at least a bottom side of the leads or lead terminals.

The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.