A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

A semiconductor device includes gate electrodes on a substrate and a memory channel structure extending through the gate electrodes. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The memory channel structure extends in the vertical direction on the substrate. The memory channel structure includes a first filling pattern extending in the vertical direction, a channel on a sidewall of the first filling pattern, and a charge storage structure on a sidewall of the channel. The first filling pattern includes a material having a thermal conductivity equal to or more than about 100 W/m.Math.K at a temperature of about 25° C.

A package structure includes: a heat dissipation substrate; at least one die, including a signal transmitting side and a heat conduction side, wherein the signal transmitting side and the heat conduction side are two opposite sides on the die, and the heat conduction side is disposed on and in contact with the heat dissipation substrate; plural metal bumps, disposed on the signal transmitting side; and a package material, encapsulating the die, a side of the heat dissipation substrate in contact with the die, and the metal bumps, wherein a portion of each metal bump is exposed to an outside of the package material.

A basic structural body for constructing heat dissipation device and a heat dissipation device are disclosed. The heat dissipation device includes a first basic structural body having a wick structure formed on one side surface thereof; and the first basic structural body and the wick structure are structural bodies formed layer by layer. Two pieces of first basic structural bodies can be correspondingly closed together to construct a heat dissipation device internally defining an airtight chamber. In this manner, the heat dissipation device can be designed in a more flexible manner.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

Provided is a boron nitride sintered body including boron nitride particles and pores, in which an average pore diameter of the pores is less than 2 μm. Provided is a method for manufacturing a boron nitride sintered body, the method including: a nitriding step of firing a boron carbide powder in a nitrogen pressurized atmosphere to obtain a fired product containing boron carbonitride; and a sintering step of molding and heating a blend containing the fired product and a sintering aid to obtain the boron nitride sintered body including boron nitride particles and pores, in which the sintering aid contains boron oxide and calcium carbonate, and the blend contains 1 to 20 parts by mass of a boron compound and a calcium compound in total with respect to 100 parts by mass of the fired product.

The power module includes: a heat spreader having a plate shape and having heat conducting property; a semiconductor element at least thermally connected to a one-side surface of the heat spreader; a highly-heat-dissipating insulation adhesive sheet having a plate shape and having a one-side surface thermally connected to an other-side surface of the heat spreader; a metal plate having a one-side surface thermally connected to an other-side surface of the highly-heat-dissipating insulation adhesive sheet; and a sealing resin member sealing the semiconductor element, the heat spreader, the highly-heat-dissipating insulation adhesive sheet, and the metal plate in a state where an other-side surface of the metal plate is exposed, wherein the highly-heat-dissipating insulation adhesive sheet is a complex obtained by impregnating, with a resin, a porous ceramic sintered body in which ceramic particles have a gap and have been integrally sintered.

A power electronics module includes a glass layer with one or more vias extending through the glass layer and having an electrically and thermally conductive material disposed within the one or more vias, a power electronic device directly bonded to a first surface of the glass layer, and, a cooling structure thermally coupled to a second surface of the glass layer.

Provided is a boron nitride sintered body including boron nitride particles and pores, in which a compressive elastic modulus is 1 GPa or more. Provided is a method for manufacturing a boron nitride sintered body, the method including: a nitriding step of firing a boron carbide powder in a nitrogen atmosphere to obtain a fired product containing boron carbonitride; and a sintering step of molding and heating a blend containing the fired product and a sintering aid to obtain the boron nitride sintered body including boron nitride particles and pores, in which the sintering aid contains a boron compound and a calcium compound, and the blend contains 1 to 20 parts by mass of the boron compound and the calcium compound in total with respect to 100 parts by mass of the fired product.