A method for incorporating semiconductors on a diamond substrate. A buffer layer (e.g., GaN) is grown on a transition layer (e.g., AlN/AlGaN) residing on a substrate. A silicon nitride layer is then grown on the buffer layer. After selectively seeding diamond on the silicon nitride layer, the selective seeding of the diamond is dry etched to form regions with seeded diamond and regions without seeded diamond. The silicon nitride is selectively etched in the regions without seeded diamond and diamond is grown in the regions with seeded diamond forming regions of diamond. Additional Group III-nitride semiconductor material (e.g., GaN) is grown in the etched regions without seeded diamond to fill such regions to reach a level of the regions with diamond. An epitaxial overgrowth of the Group III semiconductor material at and above the level of the regions with diamond is then performed.

This application provides a heat conductor with a large coefficient of thermal conductivity, which can be used to dissipate heat for a semiconductor device, and in particular, may be used in the semiconductor device package field. The heat conductor includes a matrix, and a diamond particle and a first metal nanoparticle that are distributed in the matrix, and an outer surface of the diamond particle successively includes a carbide film layer, a first metal film layer, and a second metal film layer. The three film layers are used to reduce interface thermal resistance between the diamond particle and the first metal nanoparticle. In addition, this application further provides a fluid heat-conducting material and a semiconductor package structure that uses the foregoing heat conductor.

A hermetically sealed electronic package may include a thermal panel having a panel interior surface and a panel exterior surface with electronic device(s) in thermal communication with the panel interior surface. An enclosure, isolating environmental communication from internal electronic devices and modules, may be coupled to the thermal panel, and the enclosure may have an enclosure interior surface and an enclosure exterior surface. A plurality of electrical feedthroughs may be coupled to the package enclosure for signal and data transmission, and the conducting pin(s) in every electrical feedthrough may be bonded by a hydrophobic sealing material for harsh environmental electrical signal, data and power transmission. The ratio of sealing length over sealing bead diameter in the electrical feedthrough subassembly may have a preferred value from 2 to 3; and the ratio of the sealing bead diameter over pin diameter in the electrical feedthrough subassembly may have a preferred value from 1.5 to 2.0, where a preferred thermal stress resistance could be designed for making highly hermetic sealed electronic package.

A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.

A 3D semiconductor device a first level, where the first level includes a first layer which includes first transistors, where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer which includes second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the second level includes at least one first ElectroStatic Discharge (ESD) circuit, and where the first level includes at least one second ESD circuit.

In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, Al.sub.xGa.sub.yN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.

A semiconductor package is described. The semiconductor package includes a passive substrate and a first integrated passive device (IPD) in a first interlayer-dielectric (ILD) layer on the passive substrate. The semiconductor package also includes a second ILD layer on the first ILD layer. The semiconductor package further includes a second IPD in a third ILD layer on the second ILD layer. The semiconductor package also includes a thermal mitigation structure on inductive elements of the second IPD.

Heat dissipation technology in a die stack is disclosed. In one example, an electronic device comprises a pair of electrically coupled dies; and a heat spreader disposed between the pair of dies and electrically isolated from an electrical connection between the pair of dies.

Embodiments of this application provide a chip and a manufacturing method thereof, and an electronic device, and belong to the field of chip heat dissipation technologies. The chip includes a die and a thermal conductive sheet. An active surface of the die is connected to the thermal conductive sheet by using a first bonding layer. Heat generated at a part with a relatively high temperature on the active surface of the die can be quickly conducted and dispersed by using the thermal conductive sheet, so that temperatures on the active surface are evenly distributed to avoid an excessively high local temperature of the chip, thereby preventing running of the chip from being affected.

A method for controlling an avalanche photo diode (APD) and a device that includes a high gain stable APD. The device may include an APD, a compensation circuit that comprises a compensation component that is thermally coupled to the APD, a temperature control module having a part that is thermally coupled to the compensation component and to the APD, and one or more additional components. The APD is formed within a first semiconductor epitaxial layer that is grown on a first side of a substrate, the substrate is highly thermally conductive and electrically insulating.