A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming control circuitry of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth and fifth metal layers above second level; a global power distribution grid includes fifth metal, and local power distribution grid includes the second metal layer, where the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

Disclosed are methods for providing a thin film of nanocrystalline diamond grown on 6 nm nanocrystalline diamond powder on the surface of substrates. The thin film of nanocrystalline diamond can be deposited on wide-bandgap semiconducting devices to provide heat dissipation characteristics to the semiconducting devices.

A method and apparatus for conducting heat away from a semiconductor die are disclosed. A board assembly is disclosed that includes a circuit board, a semiconductor die electrically coupled to the circuit board and a Chemical Vapor Deposition Diamond (CVDD) coated wire. A portion of the CVDD-coated wire extends between a hot-spot on the semiconductor die and the circuit board. The board assembly includes a layer of thermally conductive paste that is disposed between the hot-spot on the semiconductor die and the circuit board. The layer of thermally conductive paste is in direct contact with a portion of the CVDD-coated wire.

A method of producing a composite material, the method including: preparing a mixed powder of diamond particles and copper powder particles; and generating a composite material containing diamond and copper from the mixed powder by pulsed electric current sintering with a pressure of 5 MPa or greater and 100 MPa or less applied to the mixed powder, and the mixed powder maintained at a temperature equal to or higher than 500° C. and lower than 800° C.

A chip includes a housing, a plurality of silicon wafers, and a plurality of thermal pads. The plurality of silicon wafers and the plurality of thermal pads are mounted in the housing in a stacked manner. The thermal pad is mounted between two adjacent silicon wafers, and an edge of the thermal pad extends from a gap between the two adjacent silicon wafers. The thermal pad is mounted between the two adjacent silicon wafers.

An IC device includes a heat spreader, an electronic component over the heat spreader, an optical component over the electronic component, a multilayer structure over the optical component, and a redistribution structure over the multilayer structure. The multilayer structure includes a waveguide optically coupled to the optical component. The redistribution structure is electrically coupled to the electronic component by vias through the optical component and the multilayer structure.

A nitride semiconductor device includes: a diamond substrate; a first graphene layer provided on the diamond substrate; a second graphene layer provided on the first graphene layer; a nitride semiconductor layer provided on the second graphene layer; and a nitride semiconductor element having an electrode provided on the nitride semiconductor layer, wherein the first and second graphene layers are provided as an interface layer between the diamond substrate and the nitride semiconductor layer.

A semiconductor device includes a diamond substrate made of diamond, and a nitride semiconductor layer formed in a recess formed at an upper surface of the diamond substrate. The semiconductor device further includes at least one of: (A) the nitride semiconductor layer formed to be surrounded entirely by the upper surface of the diamond substrate in a plan view; (B) the diamond substrate in which the upper surface of the diamond substrate and an upper surface of the nitride semiconductor layer are located on the same plane; and (C) the diamond substrate having electrical insulating properties.

3D semiconductor packages and methods of forming 3D semiconductor package are described herein. The 3D semiconductor packages are formed by mounting a die stack on an interposer, dispensing a thermal interface material (TIM) layer over the die stack and placing a heat spreading element over and attached to the die stack by the TIM layer. The TIM layer provides a reliable adhesion layer and an efficient thermally conductive path between the die stack and interposer to the heat spreading element. As such, delamination of the TIM layer from the heat spreading element is prevented, efficient heat transfer from the die stack to the heat spreading element is provided, and a thermal resistance along thermal paths through the TIM layer between the interposer and heat spreading element are reduced. Thus, the TIM layer reduces overall operating temperatures and increases overall reliability of the 3D semiconductor packages.

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming a plurality of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing a first etch step; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth metal layer above; forming a connection to the second metal layer which includes a via through the second level; forming a fifth metal layer above, where some second transistors include a metal gate, and the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.