Embodiments of this application provide an electronic device, a rotating shaft, a laminated composite material, and a method for manufacturing a laminated composite material. The laminated composite material includes at least two material layers that are laminated, and the at least two material layers include a first material layer and a second material layer adjacent to each other. The first material layer uses a first metal material, yield strength of the first metal material is greater than 200 Mpa, and an elongation rate of the first metal material is greater than 6%. The second material layer uses a first composite material, and the first composite material includes a second metal material and diamond particles. In this way, heat conduction performance and heat dissipation performance of the rotating shaft are improved while fracture-resistant performance and wear-resistant performance of the rotating shaft are ensured, thereby improving user experience.

A semiconductor device includes a source electrode and a drain electrode located over a surface of a semiconductor layer including an electron transit layer and an electron supply layer. A gate electrode is located between the source electrode and the drain electrode. A first diamond layer is located between the source electrode and the drain electrode over the surface with an insulating film therebetween. A second diamond layer is located directly on the surface between the gate electrode and the drain electrode. Of heat generated by the semiconductor layer of the semiconductor device in operation, heat on the side of the electrode on which a relatively strong electric field is applied is efficiently transferred to the second diamond layer. The semiconductor device achieves an excellent heat dissipation property from the semiconductor layer and effectively suppresses overheating and a failure and degradation of the characteristics due to the overheating.

Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present disclosure use a “diamond last” process using thermally stable metal nitride gate electrodes to enable thicker heat spreading films and facilitate process integration. In an embodiment, the “diamond last” process with high thermal conductivity diamond is enabled by the integration of thermally stable metal-nitride gate electrodes.

3D semiconductor packages and methods of forming 3D semiconductor package are described herein. The 3D semiconductor packages are formed by mounting a die stack on an interposer, dispensing a thermal interface material (TIM) layer over the die stack and placing a heat spreading element over and attached to the die stack by the TIM layer. The TIM layer provides a reliable adhesion layer and an efficient thermally conductive path between the die stack and interposer to the heat spreading element. As such, delamination of the TIM layer from the heat spreading element is prevented, efficient heat transfer from the die stack to the heat spreading element is provided, and a thermal resistance along thermal paths through the TIM layer between the interposer and heat spreading element are reduced. Thus, the TIM layer reduces overall operating temperatures and increases overall reliability of the 3D semiconductor packages.

A semiconductor structure includes a glass substrate and a device wafer. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.

A composite material of the present disclosure contains a plurality of diamond particles, copper, and at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum tungsten and aluminum, wherein the content rate of the first element based on the total mass of the copper and the first element is 50 ppm or higher and 2,000 ppm or lower.

This diamond composite includes a first base substrate which has an oxide layer of element M and contains the element M in the composition and a second base substrate which is bonded to the oxide layer and is composed of diamond, in which the M is one or more selected from a metal element with which an oxide can be formed, Si, Ge, As, Se, Sb, Te, and Bi, and the second base substrate is bonded to the oxide layer of the first base substrate by M-O—C bonding of at least some C atoms on the surface of the diamond constituting the second base substrate.

An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.

A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.