A semiconductor package including a base comprising an upper surface and a lower surface that is opposite to the upper surface; a radio-frequency (RF) module embedded near the upper surface of the base; an integrated circuit (IC) die mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation; a plurality of conductive structures disposed on the lower surface of the base and arranged around the IC die; and a metal thermal interface layer comprising a backside metal layer that is in contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.

A bonding structure includes: a plurality of carbon nanotubes; a first bonded member, and a first metal sintered compact bonding first end portions of the plurality of carbon nanotubes and the first bonded member, wherein the first metal sintered compact enters spaces between the first end portions of the plurality of carbon nanotubes, and bonds to the plurality of carbon nanotubes while covering side faces and end faces of the first end portions of the plurality of carbon nanotubes.

Provided is a thermal conduction sheet, including graphite particles (A) of at least one kind selected from the group consisting of flake-shaped particles, ellipsoidal particles, and rod-shaped particles, in which: when the graphite particles (A) are flake-shaped particles, a planar direction of the graphite particles (A) is oriented in a thickness direction of the thermal conduction sheet, when the graphite particles (A) are ellipsoidal particles, a major axis direction of the graphite particles (A) is oriented in the thickness direction of the thermal conduction sheet, when the graphite particles (A) are rod-like particles, a longitudinal direction of the graphite particles (A) is oriented in the thickness direction of the thermal conduction sheet, the thermal conduction sheet has an elastic modulus of 1.4 MPa or less under a compression stress of 0.1 MPa at 150° C., and the thermal conduction sheet has a tack strength of 5.0 N.Math.mm or higher at 25° C.

A package structure including a circuit board and a heat generating element is provided. The circuit board includes a plurality of circuit layers and a composite material layer. A thermal conductivity of the composite material layer is between 450 W/mK and 700 W/mK. The heat generating element is disposed on the circuit board and electrically connected to the circuit layers. Heat generated by the heat generating element is transmitted to an external environment through the composite material layer.

An object is to provide a heat conductive sheet having good handleability when mounting between the heating element and the heat dissipator, and softness that enables the distortion of the heating element, the heat dissipator, and the like to be suppressed in use. The heat conductive sheet contains: a matrix comprising a cured product of organopolysiloxane; and heat conductive fillers comprising anisotropic fillers with their major axes oriented in the thickness direction, and has a load property P represented b formula (1) below of 0.1 to 0.7: Load property P=(F.sub.30−F.sub.20)/F.sub.10 (1) wherein F.sub.10 is a load of the heat conductive sheet at 10% compression, F.sub.20 is a load of the heat conductive sheet at 20% compression, and F.sub.30 is a load of the heat conductive sheet at 30% compression.

Disclosed is a semiconductor packaging. The semiconductor packing comprises a substrate on which a semiconductor device is arranged on a front surface; a channel member disposed on a rear surface of the substrate and forming a cooling flow path through which a refrigerant moves; and a porous diamond layer covering an outer surface of the channel member.

The purpose of the present invention is to provide a sandwich structure that has both excellent heat dissipation properties and excellent mechanical properties. In order to achieve this purpose, the sandwich structure of the present invention has the following structure. The sandwich structure includes a core member (I), and a fiber reinforced member (II) disposed on both sides of the core member (I), wherein the core member (I) includes a sheet-shaped heat conductive member (III) having an in-plane thermal conductivity of 300 W/m.K or more.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

A heat sink includes a heat sink fin (HSF), a first heat sink plate (HSP), and a second HSP that is opposite to the first HSP. The HSF is located on the first HSP. The second HSP is flexible. Further, an elastic component is disposed between the first HSP and the second HSP. The second HSP is in contact with a heat source component (HSC). Thus, when the heat sink is placed on the HSC, the second HSP contacts the HSC, the second HSP is deformed because the heat sink and the HSC are pressed against each other, and the elastic component between the first HSP and the second HSP is compressed such that heat generated by the HSC is transferred to the heat sink.

The power controller apparatus includes a plurality of parts including a heat member and a heat dissipation member. The power controller apparatus includes a housing for accommodating these plurality of parts. The power controller apparatus includes a snap fit and a thermal conductive member. The snap fit connects the heat member and the heat dissipation member. The thermal conductive member is arranged between the heat member and the heat dissipation member. The thermal conductive member includes a filler having anisotropy with respect to thermal conductivity. The filler is oriented so as to exhibit high thermal conductivity in a stacking direction between the heat member and the heat dissipation member.