H01L23/3735

HEAT DISSIPATION SUBSTRATE STRUCTURE HAVING NON-RECTANGULAR HEAT DISSIPATION LAYER
20230025676 · 2023-01-26 ·

A heat dissipation substrate structure having a non-rectangular heat dissipation layer is provided. The heat dissipation substrate structure having the non-rectangular heat dissipation layer includes a heat dissipation substrate and the non-rectangular heat dissipation layer. The non-rectangular heat dissipation layer is disposed on the heat dissipation substrate, and has one or more positioning features located at one corner of a brazing area of the non-rectangular heat dissipation layer, so as to position a component for subsequent brazing. The non-rectangular heat dissipation layer has one or a plurality of heat dissipation pins that extend from one or more sides of the brazing area of the non-rectangular heat dissipation layer.

BACK PLATES TO SUPPORT INTEGRATED CIRCUIT PACKAGES IN SOCKETS ON PRINTED CIRCUIT BOARDS AND ASSOCIATED METHODS
20230022058 · 2023-01-26 ·

Back plates to support integrated circuit packages in sockets on printed circuit boards and associated methods are disclosed. An example back plate includes a ceramic substrate having a first surface and a second surface opposite the first surface. The example back plate further includes metal coupled to the ceramic substrate. At least a portion of the metal is disposed between planes defined by the first and second surfaces of the ceramic substrate.

SYSTEMS INCLUDING A POWER DEVICE-EMBEDDED PCB DIRECTLY JOINED WITH A COOLING ASSEMBLY AND METHOD OF FORMING THE SAME

Systems including power device embedded PCBs coupled to cooling devices and methods of forming the same are disclosed. One system includes a power device embedded PCB stack, a cooling assembly including a cold plate having one or more recesses therein, and a buffer cell disposed within each of the one or more recesses. The cooling assembly is bonded to the PCB stack with a insulation substrate disposed therebetween. The cooling assembly is arranged such that the buffer cell faces the PCB stack and absorbs stress generated at an interface of the PCB stack and the cooling assembly.

SEMICONDUCTOR DEVICE, BUSBAR, AND POWER CONVERTER

Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100. The second terminal 120 has a second sheathed part 121 projecting from the sealing body 100, the second sheathed part 121 being sheathed with an insulating material, and a second exposed part 122 projecting from the second sheathed part 121, the second exposed part 122 being exposed outside the sealing body 100. A distance D2 along a given direction from a front end 121a of the second sheathed part 121 to the sealing body 100 is longer than a distance D1 along the given direction from a front end 112a of the first exposed part 112 to the sealing body 100.

Carrier substrate with a thick metal interlayer and a cooling structure

The present invention proposes a carrier substrate (1) for electrical components (13), the carrier substrate (1) having a component side (4) and a cooling side (5) which is opposite the component side (4) and has a cooling structure (30), the carrier substrate (1) comprising a primary layer (10) which faces the component side (4) and is produced from ceramic for electrical insulation, and a secondary layer (20) which faces the cooling side (5) for stiffening the carrier substrate (1), characterized in that a metallic intermediate layer (15) is arranged between the primary layer (10) and the secondary layer (20) for heat transfer from the component side (4) to the cooling side (5), the metallic intermediate layer (15) being thicker than the primary layer (10) and/or the secondary layer (20).

CLAMPED PYROLYTIC GRAPHITE SHEETS FOR HEAT SPREADING
20230232586 · 2023-07-20 ·

A heat spreading element is provided. The heat spreading element includes compressible pyrolytic graphite sheets and rigid pyrolytic graphite sheets interleaved with the compressible pyrolytic graphite sheets.

Power module and method of manufacturing the same, and power conversion apparatus

A power module includes a plurality of conductive wire groups and a sealing member. The plurality of conductive wire groups each include a first bonded portion and a second bonded portion. A maximum gap between intermediate portions of a pair of conductive wire groups adjacent to each other is larger than a first gap between the first bonded portions of the pair of conductive wire groups adjacent to each other. The maximum gap between the intermediate portions of the pair of conductive wire groups adjacent to each other is larger than a second gap between the second bonded portions of the pair of conductive wire groups adjacent to each other. Therefore, the power module is improved in reliability.

ELECTRONIC MOUNTING SUBSTRATE AND ELECTRONIC DEVICE
20230232536 · 2023-07-20 · ·

An electronic element mounting substrate includes a first substrate that has a first main surface, has a rectangular shape, and has a mounting portion for an electronic element on the first main surface, and a second substrate that is located on a second main surface opposite to the first main surface, is made of a carbon material, has a rectangular shape, has a third main surface facing the second main surface and a fourth main surface opposite to the third main surface, in which the third main surface or the fourth main surface has heat conduction in a longitudinal direction greater than heat conduction in a direction perpendicular to the longitudinal direction, and that has a recessed portion on the fourth main surface.

HEAT TRANSFER FOR POWER MODULES

In one general aspect, an apparatus can include a first module including a first semiconductor die, and a first heatsink coupled to the first module where the first heatsink includes a substrate and a first plurality of protrusions. The apparatus can also include a second module including a second semiconductor die, and a second heatsink coupled to the second module and including a second plurality of protrusions. The apparatus can also include a cover defining a channel where the first plurality of protrusions of the first heatsink and the second plurality of protrusions of the second heatsink are disposed within the channel.

Semiconductor device comprising a resin case and a wiring member that is flat in the resin case
11562977 · 2023-01-24 · ·

A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.