Embodiments include semiconductor packages. A semiconductor package includes a hybrid interposer with a first region and a second region. The first region is comprised of glass or low thermal conductive materials, and the second region is comprised of silicon or diamond materials. The semiconductor package includes a first die on the first region of the hybrid interposer, a second die on the second region of the hybrid interposer, and an integrated heat spreader over the first die, the second die, and the hybrid interposer. The hybrid interposer includes first and second interconnects, where the first interconnects vertically extend from a bottom surface of the first region to a top surface of the first region, and where the second interconnects vertically extend from a bottom surface of the second region to a top surface of the second region. The first interconnects are through-glass vias, and the second interconnects are through-silicon vias.

Information handling system thermal rejection of thermal energy generated by one or more components, such as a central processing unit and graphics processing unit, is enhanced by disposing boron arsenide between the one or more components and a heat transfer structure that directs thermal energy from the one or more components to a heat rejection region, such as cooling fan exhaust. For instance, the boron arsenide is a layer formed with chemical vapor deposition on a copper heat pipe or a layer of thermal grease infused with the boron arsenide.

A semiconductor structure includes a semiconductor substrate, a porous semiconductor region within the semiconductor substrate, and through-substrate via (TSV) within the porous semiconductor region. The porous semiconductor region causes the semiconductor structure and/or the TSV to withstand thermal and mechanical stresses. Alternatively, the semiconductor structure includes a semiconductor buffer ring within the porous semiconductor region, and the TSV within the semiconductor buffer ring.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

A method of fabricating a substrate for epitaxial growth of a layer of gallium nitride (GaN), aluminum gallium nitride (AlGaN) or indium gallium nitride (InGaN), comprises the following successive steps: providing a base substrate comprising at least one layer of single-crystal silicon carbide, performing epitaxial growth of a layer of semi-insulating SiC having a thickness larger than 1 m on the layer of single-crystal SiC to form a donor substrate, implanting ionic species into the layer of semi-insulating SiC so as to form a weakened region defining a thin layer of single-crystal semi-insulating SiC to be transferred, bonding the layer of semi-insulating SiC directly to a receiver substrate having a high electrical resistivity, and detaching the donor substrate along the weakened region so as to transfer the thin layer of single-crystal semi-insulating SiC to the receiver substrate.

A method of fabricating a semiconductor package structure is provided. The structure is configured to include a base substrate, a die placed on the base substrate, the die including a semiconductor device, a solder bump placed on one surface of the die to exhaust heat generated in the die to an outside; and a solder ball placed on other surface of the die facing the one surface to transmit a signal, which is produced by the semiconductor device of the die, to an external device.

A semiconductor package device may include a first package substrate, a first semiconductor chip on the first package substrate, an interposer on the first semiconductor chip, a warpage prevention member on the interposer, a molding member on the interposer and the first package substrate, and a second package substrate on the molding member. At least a portion of a top surface of the molding member may be spaced apart from a bottom surface of the second package substrate.

A semiconductor package includes a first semiconductor chip, a second semiconductor chip attached to an upper surface of the first semiconductor chip, a silicon heat-dissipation body thermally connected to at least one of the first semiconductor chip and the second semiconductor chip, and a molding member configured to surround the first semiconductor chip and the second semiconductor chip and exposing an upper surface of the silicon heat-dissipation body.

A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.

A semiconductor device that includes a semiconductor substrate having a surface, the surface having several regions having different thermal and/or mechanical requirements; and a composite thermal interface material including several spatially localized thermal interface materials placed on the surface, each of the several thermal interface materials tailored to the different thermal and/or mechanical requirements of each of the regions. Also disclosed is a method of forming the composite thermal interface material.