A stacked semiconductor microcooler includes a first microcooler and a second microcooler. The microcoolers may be positioned such that the fins of each microcooler are vertically aligned. The microcoolers may include an inlet passage to accept coolant and an outlet passage to expel the coolant. One or more microcoolers may be thermally connected to an electronic device heat generating device, such as an integrated circuit (IC) chip, or the like. Heat from the electronic device heat generating device may transfer to the one or more microcoolers. A flow of cooled liquid may be introduced through the passages and heat from the one or more microcoolers may transfer to the liquid coolant.

Gap pads or gap fillers having independently tunable mechanical and thermal properties and methods of making and using thereof are described herein. The gap pads or gap fillers described can be used, for example, to interface a heat generating source and a heat sink.

An interposer for vertically separating device die is disclosed. The interposer includes a compliant layer comprising a plurality of thermally conductive plugs that are physically disconnected within the plane of the compliant layer, where the space between the plugs is filled with a compliant medium. In some embodiments, at least one of the top and bottom surfaces of the compliant layer is coated with a thin layer of electrically insulating material.

An electronics assembly comprises a semiconductor device having a first device surface and at least one device conductive layer disposed on the first device surface. A cooling structure is coupled to the semiconductor device. The cooling structure comprises a first cooling structure surface and a second cooling structure surface. The second cooling structure surface is opposite from the first cooling structure surface and the first cooling structure surface is coupled to the semiconductor device. One side cooling structure surface is transverse to the respective first and second cooling structure surface. The one side electrode is disposed on the at least one side cooling structure surface in which the at least one side electrode is electrically coupled to the at least one device conductive layer. The cooling structure includes a fluid inlet for receiving a cooling fluid and a fluid outlet for removing the cooling fluid from the cooling structure.

A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

A composite material includes a base resin, a heat dissipation filler that is mixed into the base resin, hollow particles that are mixed into the base resin, hollow particles that are mixed into the base resin, and bubbles that are formed in the base resin.

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

A semiconductor assembly having heat dissipation characteristics includes stacked semiconductor chips thermally conductible to a thermal pad of an interconnect substrate and electrically connected to the interconnect substrate through bonding wire. The bonding wires extending from a primary routing circuitry in between the stacked chips can accommodate the height difference between the stacked chips and the interconnect substrate. These wires can also effectively compensate for the thermal expansion mismatch between the stacked chips and the interconnect substrate, thereby allowing a higher manufacturing yield and better reliability.

Stacked die semiconductor packages may include a spacer die disposed between stacked dies in the semiconductor package and the semiconductor package substrate. The spacer die translates thermally induced stresses on the solder connections between the substrate and an underlying member, such as a printed circuit board, from electrical structures communicably or conductively coupling the semiconductor package substrate to the underlying structure to mechanical structures that physically couple the semiconductor package to the underlying structure. The footprint area of the spacer die is greater than the sum of the footprint areas of the individual stacked dies in the semiconductor package and less than or equal to the footprint area of the semiconductor package substrate. The spacer die may have nay physical configuration, thickness, shape, or geometry. The spacer die may have a coefficient of thermal expansion similar to that of the lowermost semiconductor die in the die stack.

The present disclosure provides a heat dissipation structure of a semiconductor device and a semiconductor device, and it relates to a field of semiconductor technology. A heat dissipation structure of a semiconductor device according to an embodiment includes a first heat dissipation window formed on an upper surface of the heat dissipation structure at a side close to the semiconductor device, and at least one heat dissipation channel, the heat dissipation channel including an inflow channel and an outflow channel, transmitting a heat conducting medium to the first heat dissipation window via the inflow channel, the inflow channel including a first opening and a second opening, wherein the first opening is away from the first heat dissipation window, the second opening is close to the first heat dissipation window, and an opening area of the first opening is greater than an opening area of the second opening.