A flexible graphite sheet support structure forms a thermal management arrangement for device having a heat source. The flexible graphite sheet support structure includes first and second spaced apart support members and a flexible graphite sheet secured to the spaced apart support members forming a free standing flex accommodating section that spans between them. Curve retention members having convex curved surfaces are used to keep the flex accommodating section in a bell shaped curve while preventing the flexible graphite sheet from exceeding a minimum bend radius. The thermal management arrangement formed by the flexible graphite sheet support structure enables the flexible graphite sheet to move heat from one support structure to the other while reducing the transmission of vibration between them and allowing relative movement between the spaced apart support structures.

A semiconductor device including a semiconductor chip and a heat dissipation unit (heat sink) is configured as follows. The heat dissipation unit (heat sink) includes a resin tape, and a fin constituted of a graphite sheet and protruding from the resin tape. The fin, including graphene, is disposed on the semiconductor chip such that the graphene is disposed in a direction crossing a surface of the semiconductor chip. The heat dissipation unit is a rolled body in which the graphite sheet and the resin tape are layered and rolled. Thus, by use of the graphene as a constituent material of the fin, thermal conductivity is improved, whereby a heat dissipation characteristic is improved. Furthermore, since the fin is protruded from the resin tape, an exposed area of the fin is increased, and accordingly, the heat dissipation characteristic can be improved.

A semiconductor package includes a semiconductor subassembly disposed on a package substrate and including: a first layer including first dies, and an encapsulation material encapsulating the first dies; a second layer adjacent the first layer and including a substrate; a solid component disposed on the first layer; and an interface layer disposed between and mechanically bonding the solid component and the first layer. The interface layer provides a direct dielectric-to-dielectric bond including a first dielectric sublayer directly adjacent the first layer, and a second dielectric sublayer directly adjacent the first dielectric sublayer and including an amorphous material. Second dies may be disposed on the package substrate adjacent the semiconductor subassembly. A heat spreader is disposed over the semiconductor subassembly and the second dies; and a TIM is coupled to the heat spreader at one side thereof, and to respective ones of the semiconductor subassembly and the one or more dies at another side thereof.

Cooling devices for SOI wafers and methods for forming the devices are presented. A substrate having a top surface layer, a support substrate and an insulator layer isolating the top surface layer from the support substrate is provided. At least one device is disposed in the top surface layer of the substrate. The IC includes a cooling device. The cooling device includes a doped layer which is disposed in a top surface of the support substrate, and a RDL layer disposed within the support substrate below the doped layer for providing connections to hotspots in the doped layer to facilitate thermoelectric conduction of heat in the hotspots away from the hotspots.

A semiconductor device includes a substrate, a circuit element disposed on or above the upper surface of the substrate, an electrode disposed on or above the upper surface of the substrate and connected to the circuit element, and a conductor pillar bump for external connection which is disposed on the substrate and electrically connected to the electrode or the circuit element. The substrate includes a first base and a second base disposed on the first base. The circuit element and the electrode are disposed on the second base. The first base has lower thermal resistance than the second base.

Template-guided growth of carbon nanotubes using anodized aluminum oxide nanopore templates provides vertically aligned, untangled planarized arrays of multiwall carbon nanotubes with Ohmic back contacts. Growth by catalytic chemical vapor deposition results in multiwall carbon nanotubes with uniform diameters and crystalline quality, but varying lengths. The nanotube lengths can be trimmed to uniform heights above the template surface using ultrasonic cutting, for example. The carbon nanotube site density can be controlled by controlling the catalyst site density. Control of the carbon nanotube site density enables various applications. For example, the highest possible site density is preferred for thermal interface materials, whereas, for field emission, significantly lower site densities are preferable.

Embodiments herein relate to a package using aluminum oxide as an adhesion and high-thermal conductivity layer with a buildup layer having a first side and a second side opposite the first side, a first trace applied to the first side of the buildup layer, an aluminum oxide layer coupled with the first trace and an exposed area of the first side of the buildup layer, a lamination buildup layer coupled with the aluminum oxide layer on a side of the aluminum oxide layer opposite the buildup layer, wherein the lamination buildup layer includes one or more vias to the trace, and a seed layer coupled with the lamination buildup layer. Other embodiments may be described and/or claimed.

An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.

Semiconductor assemblies including thermal layers and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise one or more semiconductor devices over a substrate. The substrate includes a thermal layer configured to transfer thermal energy across the substrate. The thermal energy is transferred from the semiconductor device to the graphene layer using one or more thermal connectors.

A manufacturing method of a semiconductor packaging device is provided, and the manufacturing method includes steps as follows. A working chip is soldered on one surface of a wiring board so that an working circuit inbuilt inside a chip body of the working chip is electrically connected to the wiring board. A silicon thermal conductivity element is soldered on one surface of a heat-dissipating metal lid. The heat-dissipating metal lid is fixedly covered on the wiring board such that the silicon thermal conductivity element is sandwiched between the chip body and the heat-dissipating metal lid, and the silicon thermal conductivity element is electrically isolated from the working circuit of the chip body and the wiring board.