H01L23/4012

POWER CONVERTER AND MANUFACTURING METHOD OF THE SAME
20200245492 · 2020-07-30 · ·

A power converter may be provided with: a stacking unit including semiconductor modules interposed between adjacent coolers; a capacitor disposed next to the stacking unit; a first bus bar; a second bus bar; and an insulating plate. The insulating plate is interposed between the first bus bar and the second bus bar, and includes cylinder portions. Each of the cylinder portions passes through corresponding one of third holes of the second bus bar, and allows corresponding one of branch portions of the first bus bar and corresponding one of terminals of the semiconductor modules to pass therethrough. An emitting angle of laser beam that bonds each of the terminals and the corresponding one of the branch portions is adjusted such that reflected beam of laser reaches the corresponding one of the cylinder portions. The cylinder portions are colored in a color comprising a wavelength of the laser.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
20200243416 · 2020-07-30 ·

A semiconductor device includes a semiconductive substrate, a dielectric stack disposed over the semiconductive substrate, a probe pad formed on the dielectric stack, a test key embedded in the semiconductor device and a single via string stacking extending along a direction from a level of the probe pad to the semiconductive substrate and electrically connecting the periphery of the probe pad to the test key. A semiconductor device includes a semiconductive substrate, a dielectric stack, a probe pad, a test key, an extension segment electrically connected to the periphery of the probe pad and laterally extending from the probe pad from a top view, and a single via string stacking extending along a direction from the probe pad to the semiconductive substrate and electrically connecting the extension segment to the test key. The single via string stacking and the probe pad are laterally offset from a top view.

Electrical power conversion device
10727157 · 2020-07-28 · ·

An electrical power conversion device is provided which includes a stack of semiconductor modules and a plurality of cooling pipes. Each of the cooling pipes includes a first and a second outer shell plate which are electrically conductive. Each of the outer shell plates includes a flow-path defining portion which defines a coolant flow path between the outer shell plates and a flow-path outer periphery forming a circumference of the flow-path defining portion. The flow-path outer periphery of at least one of the outer shell plates has formed thereon an outer shell protrusion which is laid to overlap power terminals or control terminals extending from the semiconductor module to cancel a magnetic flux, as developed around the power terminals or the control terminals, thereby decreasing the inductance of the power terminals or the control terminals.

Switch assembly of reactive power compensation apparatus
10727652 · 2020-07-28 · ·

A switch assembly of a reactive power compensation apparatus may include a first switching module having a first stack structure perpendicular to a supporting module, a second switching module having a second stack structure perpendicular to the supporting module, the second switching module being connected in parallel with the first switching module, and first and second supporting members disposed above and below the first and second switching modules.

COOLING OF POWER SEMICONDUCTORS

Cooling arrangements are disclosed for solid state circuit breakers. In one arrangement, a MOV is disposed between two pulsating heat pipes. An IGCT is disposed on the other side of each pulsating heat pipe away from the MOV. In another arrangement, a bus bar is integral with a heat spreader disposed between a pulsating heat pipe and an IGCT.

Integrated circuits and methods for forming integrated circuits

An example relates to an integrated circuit including a semiconductor substrate, and a wiring layer stack located on the semiconductor substrate. The integrated circuit further includes a transistor embedded in the wiring layer stack. The transistor includes an embedded layer. The embedded layer has a thickness of less than 10 nm. The embedded layer includes at least one two-dimensional crystalline layer including more than 10% metal atoms. Further examples relate to methods for forming integrated circuits.

POWER CONVERSION APPARATUS
20200176354 · 2020-06-04 · ·

A power conversion apparatus includes a semiconductor element, a plurality of lead frames, a flow-passage formation body, an insulating portion, a metal joining material, and a resin sealing portion. The plurality of lead frames are electrically connected to the semiconductor element. The flow-passage formation body forms a coolant flow passage in which a coolant flows. The insulating portion is arranged between the lead frame and the flow-passage formation body to provide insulation between the lead frame and the flow-passage formation body. The metal joining material joins the insulating portion and the flow-passage formation body. The resin sealing portion seals the semiconductor element and the lead frames. The semiconductor element and the lead frames are integrated with the flow-passage formation body to form a semiconductor cooling assembly by the resin sealing portion.

Heat exchange device based on a pulsating heat pipe

A heat exchange device may be based on a pulsating heat pipe and a cooling arrangement. The heat exchange device may include a plurality of pipes to provide fluid paths between a first fluid distribution element and a second fluid distribution element. Each pipe of the plurality of pipes may include a group of channels. Each of the first and second fluid distribution elements may include a plate of a first type. Each plate of the first type may include openings for providing alignment functionality for the plurality of pipes. The first fluid distribution element may include a plate of a second type that may include openings for providing fluid paths between the pipes. The plate of the second type may be positioned on a side of the plate of the first type of plates of the first fluid distribution element that is opposite to the second fluid distribution element.

WATERPROOF CASING
20200161213 · 2020-05-21 · ·

The waterproof casing has a housing and a grommet. The grommet is disposed in a hole of the housing. The grommet has a body, a flange, and a lip. The flange extends radially outward from the body. The lip protrudes from an outer peripheral part of the body and extends in a circumferential direction. The lip has a high compression portion in contact with a wall surface of the hole and a low compression portion adjacent to the high compression portion at a further side from the flange. The low compression portion has a lower compressed state than the high compression portion. The housing has a recess to allow the low compression portion to escape radially outward.

Semiconductor unit
10660244 · 2020-05-19 · ·

A semiconductor unit may include first coolers arranged in parallel; semiconductor modules, each of the semiconductor modules being interposed between a pair of the first coolers arranged adjacently; a coolant discharge pipe provided at one of the first coolers that is located at an end of a stack of the first coolers and the semiconductor modules, the coolant discharge pipe extending along a stacking direction of the first coolers and the semiconductor modules; a second cooler connected with the coolant discharge pipe; and a reactor interposed between the second cooler and the one of the first coolers located at the end of the stack.