A heat dissipation structure of a semiconductor device is provided, the semiconductor device including: an electrical bonding surface electrically connected to a substrate; and a heat dissipation surface as an opposite side of the electrical bonding surface. The heat dissipation surface makes contact with a heat spreader via a conductive TIM while the heat spreader makes contact with a heat sink via an insulating TIM. A surface of the heat spreader facing the semiconductor device includes a recess part formed in at least one part in a vicinity of an outer periphery of the semiconductor device.

A heat dissipation structure of a semiconductor device is provided, the semiconductor device including: an electrical bonding surface electrically connected to a substrate; and a heat dissipation surface as an opposite side of the electrical bonding surface. The heat dissipation surface makes contact with a heat spreader via a conductive TIM while the heat spreader makes contact with a heat sink via an insulating TIM. A surface of the heat spreader facing the semiconductor device includes a recess part formed in at least one part in a vicinity of an outer periphery of the semiconductor device.

Embodiments of a silicon-based heat dissipation device and a chip module assembly are described. An apparatus includes a chip module assembly that includes a silicon-based heat dissipation device and an extended device coupled to the silicon-based heat dissipation device. The silicon-based heat dissipation device includes a base portion having a first primary side and a second primary side opposite the first primary side. The silicon-based heat dissipation device also includes a protrusion portion on the first primary side of the base portion and protruding therefrom, with the protrusion portion having a plurality of fins. The extended device includes an extended layer. The second primary side of the base portion is configured to receive one or more heat-generating devices thereon such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

The disclosed apparatus may include (1) a cage designed to hold an optical module, (2) a ramp that is secured to the cage and supports a heat sink such that the heat sink is capable of moving along the ramp, and (3) at least one spring having one end coupled to the ramp and another end coupled to the heat sink, wherein (A) prior to insertion of the optical module into the cage, the spring exerts a force at least partially directed along an axis of insertion of the optical module and (B) insertion of the optical module into the cage moves the heat sink along the ramp such that the force exerted by the spring (I) rotates away from the axis of insertion and (II) presses the heat sink against a surface of the optical module. Various other apparatuses, systems, and methods are disclosed.

A package assembly includes a housing frame, a power module, a first heat dissipating module and a second heat dissipating module. The housing frame is fixed on the first heat dissipating module. The power module is disposed within a hollow part of the housing frame, and covers a first open end of the hollow part. The power module includes a first surface, a second surface and at least one pin. The first surface has a periphery region and a middle region. The second surface is attached on the first heat dissipating module. The at least one pin is disposed on the periphery region. The at least one pin is penetrated through the corresponding opening and partially exposed outside the housing frame. The second heat dissipating module is disposed within the hollow part and attached on the middle region of the first surface of the power module.

Embodiments of a silicon-based heat dissipation device and a chip module assembly are described. An apparatus includes a chip module assembly that includes a silicon-based heat dissipation device and an extended device coupled to the silicon-based heat dissipation device. The silicon-based heat dissipation device includes a base portion having a first primary side and a second primary side opposite the first primary side. The silicon-based heat dissipation device also includes a protrusion portion on the first primary side of the base portion and protruding therefrom, with the protrusion portion having a plurality of fins. The extended device includes an extended layer. The second primary side of the base portion is configured to receive one or more heat-generating devices thereon such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

A product and method for packaging high power integrated circuits or infrared emitter arrays for operation through a wide range of temperatures, including cryogenic operation. The present invention addresses key limitations with the prior art, by providing temperature control through direct thermal conduction or active fluid flow and avoiding thermally induced stress on the integrated circuits or emitter arrays. The present invention allows for scaling of emitter arrays up to extremely large formats, which is not viable under the prior art.

A product and method for packaging high power integrated circuits or infrared emitter arrays for operation through a wide range of temperatures, including cryogenic operation. The present invention addresses key limitations with the prior art, by providing temperature control through direct thermal conduction or active fluid flow and avoiding thermally induced stress on the integrated circuits or emitter arrays. The present invention allows for scaling of emitter arrays up to extremely large formats, which is not viable under the prior art.

A product and method for packaging high power integrated circuits or infrared emitter arrays for operation through a wide range of temperatures, including cryogenic operation. The present invention addresses key limitations with the prior art, by providing temperature control through direct thermal conduction or active fluid flow and avoiding thermally induced stress on the integrated circuits or emitter arrays. The present invention allows for scaling of emitter arrays up to extremely large formats, which is not viable under the prior art.

The disclosure describes a lid allowing for a thermal interface material with fluidity, like a liquid metal, in a lidded flip chip package, including: a lid, a sealing ring for forming a sealed gap between a flip chip and the lid, a storage tunnel in the lid for accepting or releasing a liquid from or to the sealed gap, a connecting hole connecting the sealed gap with the storage tunnel, an injection hole with a plug, wherein a plug structure is formed at an outer end of the storage tunnel for opening or closing it, a slippery skin is arranged on an inner surface of the storage tunnel for a better flow of a liquid metal in it, the sealed gap is completely filled with a liquid metal, and a portion of the storage tunnel is filled with the same liquid metal and its remaining portion is filled with a gas.