H01L23/4275

Circuit board with phase change material

Various circuit board embodiments are disclosed. In one aspect, an apparatus is provided that includes a circuit board and a first phase change material pocket positioned on or in the circuit board and contacting a surface of the circuit board.

Electronic power module comprising a dielectric support

A power electronic module (1) including at least one semiconductor (5) that is connected to connection conductors (6, 7), and including a dielectric carrier (10) having both a fixed layer (9), on which at least one of said connection conductors (6) is mounted, and a movable layer (11), the fixed layer (9) and the movable layer (11) exhibiting similar dielectric permittivities and being superposed along at least one surface facing the at least one connection conductor (6).

HEAT STORAGE SHEET, HEAT STORAGE MEMBER, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF HEAT STORAGE SHEET

The present invention provides a heat storage sheet which exhibits an excellent heat storage property, a heat storage member, an electronic device, and a manufacturing method of a heat storage sheet. The heat storage sheet according to an embodiment of the present invention is a heat storage sheet including a heat storage material, and a microcapsule which encapsulates at least a part of the heat storage material, in which a content ratio of the heat storage material to a total mass of the heat storage sheet is 65% by mass or more.

Multi layer thermal interface material

A multi-layer thermal interface material including two or more thermal interface materials laminated together, where each of the two or more thermal interface materials comprise different mechanical properties.

SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

A semiconductor package includes a redistribution substrate having first and second surfaces, and an insulating member and a plurality of redistribution layers on different levels in the insulating member and electrically connected together; a plurality of under bump metallurgy (UBM) pads in the insulating member and connected to a redistribution layer, among the plurality of redistribution layers, adjacent to the first surface, the UBM pads having a lower surface exposed to the first surface of the redistribution substrate; a dummy pattern between the UBM pads in the insulating member, the dummy pattern having a lower surface located at a level higher than the lower surface of the UBM pads; and at least one semiconductor chip on the second surface of the redistribution substrate and having a plurality of contact pads electrically connected to a redistribution layer, among the plurality of redistribution layers, adjacent to the second surface.

Semiconductor Device Power Metallization Layer with Stress-Relieving Heat Sink Structure

A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.

Phase changing on-chip thermal heat sink

A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.

Heat dissipation apparatus and terminal device having same

A heat dissipation apparatus applied to a terminal device includes a phase change material (PCM) and a heat transfer unit. The heat transfer unit is in contact with the PCM to conduct heat of the terminal device to the PCM. Because the PCM maintains a temperature substantially unchanged during a phase change, a temperature of the heat dissipation apparatus is not excessively high while heat is absorbed.

COOLING SYSTEMS ADAPTED TO BE THERMALLY CONNECTED TO HEAT-GENERATING EQUIPMENT
20210168970 · 2021-06-03 ·

A cooling device comprises a first casing for direct mounting on a heat-generating component and a second casing mounted on the first casing. One casing includes an internal channel connected to a cold inlet and to a hot outlet allowing a heat-transfer fluid to flow in the internal channel. The other casing includes a storage containing a phase change material (PCM) changing from a solid state to a liquid state to transfer thermal energy from the heat-generating unit to the PCM, the PCM changing from the liquid state to the solid state to transfer thermal energy from the PCM to the heat-transfer fluid. The cooling device may be integrated in a cooling circuit of a cooling system including an external cooling unit, or in a closed loop cooling circuit of a cooling arrangement that transfers heat from the closed loop to an open loop.

Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices

Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a cooling device for a semiconductor device includes a reservoir having a first plate and a second plate coupled to the first plate. A cavity is between the first plate and the second plate. A phase change material (PCM) is in the cavity. The cooling device is adapted to dissipate heat from a packaged semiconductor device.