A semiconductor device includes an assembly configured such that a plurality of semiconductor modules is connected by a component. Each of the plurality of semiconductor modules includes a semiconductor element including a front-surface electrode fixing a front-surface electrode plate and a back-surface electrode fixing a back-surface electrode plate, wherein the component is either of a first component and a second component. The first component being configured to connect adjacent semiconductor modules to each other such that a front-surface electrode plate of one of the adjacent semiconductor modules is connected to a back-surface electrode plate of the other one of the adjacent semiconductor modules. The second component is configured to connect adjacent semiconductor modules such that respective front-surface electrode plates are connected and respective back-surface electrode plates are connected. The semiconductor modules are connected by the first component or the second component.

A semiconductor device is provided, including: a bottom portion having a pad formed of a conductive material; a lid portion covering at least a part of the bottom portion; and a first terminal portion and a second terminal portion which are provided in parallel with each other, are fixed to the lid portion, and each contact a corresponding pad, wherein: the first terminal portion is provided with a first plate-shaped portion; the second terminal portion is provided with a second plate-shaped portion; and each of the first plate-shaped portion and the second plate-shaped portion has a principal surface in a direction facing the pad and is flexible in a direction toward the pad.

The present disclosure relates to a component structure, a power module and a power module assembly structure having the component structure. The component structure comprises: a first bus bar, having one end extending to a first plane to form a first connecting terminal; a second bus bar, comprising a front portion of the second bus bar and a rear portion of the second bus bar, wherein the front portion of the second bus bar is laminated in parallel with the first bus bar, and the rear portion of the second bus bar is extended to a second plane to form a second connecting terminal; and an external circuit comprising a third bus bar, wherein the third bus bar is settled in parallel with the rear portion of the second bus bar, to reduce a parasitic inductance between the first connecting terminal and the second connecting terminal.

A lighting apparatus using an organic light-emitting diode and a method of fabricating the same are characterized in that an organic emissive material and a conductive film used as a cathode are deposited on the entire surface of a substrate, and then an organic emissive layer in a lighting area and contact areas becomes separated (disconnected or cut) by laser ablation, simultaneously with the formation of a contact hole for contact with an anode. Next, cathode contact and encapsulation processes are performed using an adhesive containing conductive particles and a metal film. This simplifies the fabrication process of the lighting apparatus without using an open mask (metal mask), which is a complicated tool, thus making it useful especially in roll-to-roll manufacturing.

Provided are a chip-on-film (COF) semiconductor package capable of improving connection characteristics and a display apparatus including the package. The COF semiconductor package includes a film substrate, a conductive interconnection located on at least one surface of the film substrate and an output pin connected to the conductive interconnection and located at one edge on a first surface of the film substrate, a semiconductor chip connected to the conductive interconnection and mounted on the first surface of the film substrate, a solder resist layer on the first surface of the film substrate to cover at least a portion of the conductive interconnection, and at least one barrier dam on the solder resist layer between the semiconductor chip and the output pin.

A power semiconductor arrangement includes a plurality of half-bridges arranged in parallel alongside one another by way of a longer longitudinal side of the half-bridges. An input load current terminal, an output load current terminal and a phase terminal are arranged on a top side of each of the half-bridges, the input load current terminals and the output load current terminals being arranged on an imaginary line that runs orthogonal to the longer longitudinal side of the half-bridges. First connection plates are connected to respective ones of the output load current terminals, and second connection plates are connected to respective ones of the input load current terminals. The first connection plates are arranged above the second connection plates. The first and the second connection plates are arranged in parallel with one another and electrically insulated from one another.

In-Substrate Structures (ISS) and isolation regions, including, but not limited to Through Metal Vias (TMV), Dielectric Isolation Vias (DIV), and Dielectric Isolation Pockets (DIP) formed in a metal substrate to provide enhanced operations for semiconductor packages incorporating a metal substrate, and methods of making the same.

A lighting apparatus using an organic light-emitting diode and a method of fabricating the same are characterized in that an organic emissive material and a conductive film used as a cathode are deposited on the entire surface of a substrate, and then an organic emissive layer in a lighting area and contact areas becomes separated (disconnected or cut) by laser ablation, simultaneously with the formation of a contact hole for contact with an anode. Next, cathode contact and encapsulation processes are performed using an adhesive containing conductive particles and a metal film. This simplifies the fabrication process of the lighting apparatus without using an open mask (metal mask), which is a complicated tool, thus making it useful especially in roll-to-roll manufacturing.

Provided are a chip-on-film (COF) semiconductor package capable of improving connection characteristics and a display apparatus including the package. The COF semiconductor package includes a film substrate, a conductive interconnection located on at least one surface of the film substrate and an output pin connected to the conductive interconnection and located at one edge on a first surface of the film substrate, a semiconductor chip connected to the conductive interconnection and mounted on the first surface of the film substrate, a solder resist layer on the first surface of the film substrate to cover at least a portion of the conductive interconnection, and at least one barrier dam on the solder resist layer between the semiconductor chip and the output pin.

Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.