An electronic device includes a magnetic assembly with a multilevel lamination or metallization structure having a core layer, dielectric layers and conductive features formed in metal layers on or between the dielectric layers in respective planes of orthogonal first and second directions and stacked along an orthogonal third direction. The conductive features include first and second patterned conductive features forming first and second windings, first and second conductive capacitor plates, and first and second conductive field plates, in which the first conductive capacitor plate is between the first conductive field plate and the core layer along the third direction and the second conductive capacitor plate is between the second conductive field plate and the core layer along the third direction.

A lead frame for an integrated electronic device includes a die pad made of a first metallic material. A top coating layer formed by a second metallic material is arranged on a top surface of the die pad. The second metallic material has an oxidation rate lower than the first metallic material. The top coating layer leaves exposed a number of corner portions of the top surface of the die pad. A subsequent heating operation, for example occurring in connection with wirebonding, causes an oxidized layer to form on the corner portions of the top surface of the die pad at a position in contact with the top coating layer.

An embodiment of the present disclosure provides a substrate structure applied to a power module. In the substrate structure applied to a power module, the substrate includes an upper substrate and a lower substrate, a plurality of semiconductor devices disposed on the lower substrate, a source signal electrode transmitting a source signal to the semiconductor devices, and a gate signal electrode transmitting a gate signal to the semiconductor devices, one of the source signal electrode or the gate signal electrode is connected to the upper substrate through a conductive column, and a signal transmitted by one of the source signal electrode or the gate signal electrode is transmitted to the semiconductor devices through the upper substrate.

A semiconductor package includes a first die pad, a first semiconductor die mounted on the first die pad, an encapsulant body of electrically insulating material that encapsulates first die pad and the first semiconductor die, a plurality of package leads that each protrude out of a first outer face of the encapsulant body, a connection lug that protrudes out of a second outer face of the encapsulant body, the second outer face being opposite from the first outer face. The first semiconductor die includes first and second voltage blocking terminals. The connection lug is electrically connected to one of the first and second voltage blocking terminals of the first semiconductor die. A first one of the package leads is electrically connected to an opposite one of the first and second voltage blocking terminals of the first semiconductor die that the first connection lug is electrically connected to.

A lead frame includes a first frame member including a die pad; a second frame member that is layered on the first frame member and that includes a lead; and a resin with which a space around the die pad and the lead is filled, wherein the die pad includes a rising portion and a buried portion, the rising portion rises from the resin, the buried portion is buried in the resin and has a mount surface on which a semiconductor element is to be mounted and a side surface that is continuous to the mount surface, and the side surface is covered with the resin and has a constriction that is depressed in a direction parallel to the mount surface.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A semiconductor device comprises; a lead frame having leads and a die pad; a printed circuit board including an electrode for the connection of each of the leads and the die pad, a wiring pattern, and an opening exposing a part of a surface of the die pad; the semiconductor element for processing a high frequency signal, mounted on a surface of a metal block bonded to the surface of the die pad exposed through the opening, and connected to the wiring pattern with a metal wire; electronic components connected to the wiring pattern and mounted on a surface of the printed circuit board; and a sealing resin to seal the printed circuit board, the semiconductor element, the electronic components, and the metal wire so as to expose rear surfaces of the leads and the die pad.

A semiconductor package structure, including a lead frame, a die disposed on the front side of the lead frame, and a molding piece disposed on the lead frame and encapsulates the die, wherein the lead frame is provided with two extension portions extending respectively from two sides of the molding piece, and the extension portion is provided with recessed front surface and back surface on which a plating layer is formed.

An integrated circuit that includes micro-etched channels on a bottom surface is provided. The integrated circuit includes a lead frame having electrically conductive contact terminal pads and a die centrally disposed in the lead frame. Wire bonds provide an electrical connection from the die to the electrically conductive contact terminal pads. A mold compound encapsulates the die and the wire bonds, where a bottom surface of the mold compound is flush with a bottom surface of the contact terminal pads. A channel is defined in the bottom surface of the mold compound around a periphery of the contact terminal pads.

A sensor can comprise a sensor die with a first sensor surface and a second sensor surface opposite to the first sensor surface. The sensor can further comprise a die pad component with a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface. The sensor can further comprise a lead frame component with a first frame surface and a second frame surface opposite to the first frame surface, the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, the second pad surface is isolated from the second frame surface, and the lead frame component is electrically connected to the sensor die.