A semiconductor module includes a substrate, a semiconductor die arranged on the substrate, at least one first bond wire loop, wherein both ends of the at least one first bond wire loop are arranged on and coupled to a first electrode of the semiconductor die, and a molded body encapsulating the semiconductor die, wherein a top portion of the at least one first bond wire loop is exposed from a first side of the molded body.

A semiconductor device, such as a QFN (Quad-Flat No-lead) package, includes an insulating encapsulation of a semiconductor chip. The insulating encapsulation is formed by a first encapsulation material which encapsulates the semiconductor chip and a second encapsulation material that is molded onto an upper surface of the first encapsulation material. The first encapsulation material includes an oblique cavity extending from the upper surface. The second encapsulation material includes an anchoring protrusion that enters into the cavity.

A semiconductor device includes a semiconductor element, a sealing material, and an extension wire. The semiconductor element has, on a front surface, a first electrode pad and at least one second electrode pad, and generates a current in a direction connecting the front surface and a back surface. The sealing material is made of an insulating resin material and covers a part of the front surface and a side surface of the semiconductor element. The extension wire is disposed above the semiconductor element and inside the sealing material or on the sealing material. The extension wire is electrically connected to the second electrode pad, and extends from a position inside of a contour of the semiconductor element to a position outside of the contour of the semiconductor element.

In one example, a semiconductor device includes a substrate that comprises a substrate conductor material. An electronic component has a first component terminal that comprises a first component terminal conductor material and a second component terminal that comprises a second component terminal conductor material. An interconnect comprises an interconnect conductor material, a component end, and a substrate end. The second component terminal is attached to the substrate with a first intermetallic bond, the component end of the interconnect is attached to the first component terminal with a second intermetallic bond, and the substrate end of the interconnect is attached to the substrate with a third intermetallic bond. Other examples and related methods are also disclosed herein.

Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

A method of forming a semiconductor device includes providing a power electronics carrier including a structured metallization layer disposed on an electrically insulating substrate, mounting one or more semiconductor dies on a portion of the structured metallization layer, forming an encapsulant body of electrically insulating material that covers the power electronics carrier and encapsulates the one or more semiconductor dies, securing a press-fit connector to the power electronics carrier with a base portion of the press-fit connector being disposed within an opening in the encapsulant body and with an interfacing end of the press-fit connector being electrically accessible from outside the encapsulant body.

This disclosure relates to a leadless packaged semiconductor device including a top and a bottom opposing major surfaces and sidewalls extending between the top and bottom surfaces, the leadless packaged semiconductor device further includes a lead frame structure including an array of two or more lead frame sub-structures each having a semiconductor die arranged thereon, and terminals and a track extended across the bottom surface of the semiconductor device. The track provides a region for interconnecting the semiconductor die and terminals, and the track is filled by an insulating material to isolate the lead frame sub-structures.

Leadless power amplifier (PA) packages having topside termination interposer (TTI) arrangements, and associated fabrication methods, are disclosed. Embodiments of the leadless PA package include a base flange, a first set of interposer mount pads, a first RF power die, a package body. The first RF power die is attached to a die mount surface of the base flange and electrically interconnected with the first set of interposer mount pads. The TTI arrangement is electrically coupled to the first set of interposer mount pads and projects therefrom in the package height direction. The package body encloses the first RF power die and having a package topside surface opposite the lower flange surface. Topside input/output terminals of the PA package are accessible from the package topside surface and are electrically interconnected with the first RF power die through the TTI arrangement and the first set of interposer mount pads.

A semiconductor device package includes a carrier, a first conductive post and a first adhesive layer. The first conductive post is disposed on the carrier. The first conductive post includes a lower surface facing the carrier, an upper surface opposite to the lower surface and a lateral surface extended between the upper surface and the lower surface. The first adhesive layer surrounds a portion of the lateral surface of the first conductive post. The first adhesive layer comprises conductive particles and an adhesive. The first conductive post has a height measured from the upper surface to the lower surface and a width. The height is greater than the width.

A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.