A semiconductor device includes a semiconductor chip, a connection element configured to mechanically and electrically couple the semiconductor device to a circuit board, wherein the connection element is electrically coupled to the semiconductor chip and arranged in a mounting plane of the semiconductor device, and the semiconductor chip is mounted on the connection element. The semiconductor device further includes an extension element mechanically coupled to the connection element and extending in a direction out of the mounting plane, wherein the extension element is configured for air cooling.

A device includes a semiconductor die including a transistor. The transistor includes a plurality of parallel transistor elements. Each transistor element includes a drain region, a source region, and a gate region. The semiconductor die includes a first temperature sensor between a first transistor element in the plurality of transistor elements and a second transistor element in the plurality of transistor elements. The first temperature sensor is configured to generate a first output signal having a magnitude that is proportional to a temperature of the first temperature sensor.

A waterproof electronic device includes: an electronic component module having an electronic component including a semiconductor element, a heat dissipating member provided on the electronic component in a thermally conductive manner, and an insulating material that surrounds the electronic component in such a manner that one surface of the heat dissipating member is exposed; and a waterproof film that is formed at least on whole surfaces in regions of the electronic component module that are to be immersed in a coolant.

A mounting structure for a semiconductor module, includes: a substrate having an obverse surface and a reverse surface facing away from each other in a thickness direction; a semiconductor module mounted on a side of the substrate toward which the obverse surface is directed; and a heat dissipating member that dissipates heat from the semiconductor module. The substrate has a cavity penetrating in the thickness direction. The heat dissipating member includes a body portion located on a side of the substrate toward which the reverse surface is directed, and a protruding portion received in the cavity. The semiconductor module is bonded to the protruding portion.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

A power module is disclosed. The power module includes a first substrate, a first metal layer, at least one conductive structure and at least one power device. The first metal layer is disposed on the first substrate. The first metal layer has a first thickness d1. The first thickness d1 satisfies: 5 μm≦d1≦50 μm. The conductive structure is disposed at a position different to the first metal layer on the first substrate. The conductive structure has a second thickness d2. The second thickness d2 satisfies: d2≧100 μm. The power device is disposed on the first substrate, the first metal layer or the conductive structure. The driving electrode of the power device is electrically connected to the first metal layer. The power electrode of the power device is electrically coupled to the conductive structure.

Provided is a semiconductor device capable of having simple wiring in mounting the semiconductor device. The semiconductor device includes at least one P-terminal, at least one N-terminal, a power output terminal, at least one power supply terminal, at least one ground (GND) terminal, at least one control terminal, and a package that is rectangular in a plan view and accommodates an insulated gate bipolar transistor (IGBT) being a high-side switching element, an IGBT being a low-side switching element, and a control circuit. The at least one control terminal is disposed on a first side of the package, opposite to a second side on which the power output terminal is disposed. The at least one P-terminal, the at least one N-terminal, the at least one power supply terminal, and the at least one GND terminal are disposed on a third side of the package, orthogonal to the second side.

The present disclosure relates to a ring-frame power package that includes a thermal carrier, a spacer ring residing on the thermal carrier, and a ring structure residing on the spacer ring. The ring structure includes a ring body and a number of interconnect tabs that protrude from an outer periphery of the ring body. Herein, a portion of the carrier surface of the thermal carrier is exposed through an interior opening of the spacer ring and an interior opening of the ring body. The spacer ring is not electronically conductive and prevents the interconnect tabs from electrically coupling to the thermal carrier. Each interconnect tab includes a top plated area and a bottom plated area, which is electrically coupled to the top plated area.

Heat spreading substrate with embedded interconnects. In an embodiment in accordance with the present invention, an apparatus includes a metal parallelepiped comprising a plurality of wires inside the metal parallelepiped. The plurality of wires have a different grain structure than the metal parallelepiped. The plurality of wires are electrically isolated from the metal parallelepiped. The plurality of wires may be electrically isolated from one another.

A power electronics system has a housing, a cooling device, a power semiconductor module and a capacitor device. The cooling device has a first and a second main surface. The power semiconductor module is arranged on the first main surface and is in thermally conducting contact with the cooling device and the capacitor device is arranged on the second main surface and is in thermally conducting contact with the cooling device. At least one DC connection device is connected to a DC module connection of the power semiconductor module and has a first cooling section, which is in thermally conducting contact with the cooling device.