A flexible semiconductor device includes a first tape having bonding pads and conductive traces formed. A semiconductor die having a bottom surface is attached to the first tape and electrically connected to the bond pads by way of electrical contacts. A second tape is attached to a top surface of the semiconductor die. The first and second tapes encapsulate the semiconductor die, the electrical contacts, and at least a part of the conductive traces.

A leadless semiconductor package includes a plurality of internal gull wing leads forming a concave region and an IC die disposed in the concave region and having a plurality of conductive bumps at a first surface connected to corresponding proximal sections of the internal gull wing leads. Distal ends of the internal gull wing leads form surface mount pads at a mounting surface of the leadless semiconductor package for mounting the package to a circuit board. Packaging encapsulant extends between the mounting surface and an opposing surface of the package and encapsulates the first surface of the IC die and the proximal ends of the internal gull wing lead structures. In some implementations, the mounting surface further includes a second surface of the IC die opposite the first surface and thus a thermally conductive material may be disposed between the second surface of the IC die and the circuit board.

A flexible packaging architecture is described that is suitable for curved package shapes. In one example a package has a first die, a first mold compound layer over the first die, a wiring layer over the first mold compound layer, a second die over the wiring layer and electrically coupled to the wiring layer, and a second mold compound layer over the second die.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

A semiconductor package according to an embodiment of the present invention Includes: a lead frame comprising a pad and a lead spaced apart from the pad by a regular interval; a semiconductor chip adhered on the pad; and a clip structure electrically connecting the semiconductor chip and the lead, wherein an one end of the clip structure connected to the semiconductor chip inclines with respect to upper surfaces of chip pads of the semiconductor chip and is adhered to the upper surfaces of the chip pads of the semiconductor chip. A semiconductor package according to another embodiment of the present invention includes: a semiconductor chip comprising one or more chip pads; one or more leads electrically connected to the chip pads; and a sealing member covering the semiconductor chip, wherein an one end of the lead inclines with respect to one surface of the chip pad and is adhered to the chip pad and an other end of the lead is exposed to the outside of the sealing member.

A temporary protective film for semiconductor encapsulation molding includes a support film and an adhesive layer. The adhesive layer contains a thermoplastic resin and at least one compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, a glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, a polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, a dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether.

An exemplary embodiment provides a conductive connecting member, and a display device including the same, that includes a flexible elongated body and terminals formed at opposite ends of the body to be electrically connected to the body, wherein the body may include terminal areas in which the terminals are formed and a central area disposed between the terminal areas, and wherein two or more recess portions may be formed in edges of the body within the central area of the body.

An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

A method includes performing a non-screen printing process that deposits solder on a lead frame or on conductive features of a semiconductor die or wafer, or on or in a conductive via of a laminate structure. The method further comprises engaging the semiconductor die to the lead frame, performing a thermal process that reflows the solder, performing a molding process that forms a package structure which encloses the semiconductor die and a portion of the lead frame, and separating a packaged electronic device from a remaining portion of the lead frame.

A semiconductor device includes an electric conductor, a semiconductor element, and a bonding layer. The electric conductor has a main surface and a rear surface opposite to the main surface in a thickness direction. The semiconductor element includes a main body and electrodes. The main body has a side facing the main surface of the conductor, and the electrodes each protrude toward the main surface from the side of the main body to be electrically connected to the main surface. The bonding layer is held in contact with the main surface and the electrodes. Each electrode includes a base portion in contact with the main body, and a columnar portion protruding toward the main surface from the base portion to be held in contact with the bonding layer, which is a sintered body of a metal powder.