[Problem] An object of the present invention is to provide an electronic part mounting heat-dissipating substrate which enables a circuit for which a power semiconductor in which a large current flows is used to reduce the wiring resistances of a large power operation and improve the heat dissipation.

[Means for Solving] The present invention is an electronic part mounting heat-dissipating substrate which comprises lead frames of wiring pattern shapes formed by conductor plate and an insulating member 130 which is provided between the lead frames 110, wherein a plate surface of a part arrangement surface of said conductor plate and a top surface of said insulating member at a side of said part arrangement surface form one continuous surface, the lead frames have different thicknesses, the thick lead frame 110H is used for a large current signal and the thin lead frame 110L is used for a small current signal, a plate surface of a back surface of the part arrangement surface and a top surface of the insulating member at a side of the back surface at the part arrangement surface-side are formed in an identical plane.

A dual power converter package is disclosed. The package includes a leadframe having a first control FET paddle configured to support a drain of a first control FET, and a second control FET paddle configured to support a drain of a second control FET. The leadframe further includes a sync FET paddle configured to support a source of a first sync FET and a source of a second sync FET, and a first plurality of contacts configured to receive control signals for each of the control FETs and each of the sync FETs from a driver integrated circuit (IC) external to the leadframe. The leadframe may additionally include first and second switched nodes, configured for electrical connection to the first control FET and the first sync FET via a first clip, and to the second control FET and the second sync FET via a second clip, respectively.

Package structures, modules containing such packages and methods of manufacture. are described. In an embodiment, a package includes a plurality of terminal pads, a plurality of passive components bonded to top sides of the plurality of terminal pads, a die bonded to top sides of the plurality of passive components and a molding compound encapsulating at least the plurality of passive components and the die.

The leadframe substrate includes an isolator incorporated with metal leads by a compound layer. The metal leads are disposed about sidewalls of the isolator and provide horizontal and vertical routing for a semiconductor device to be assembled on the isolator. The compound layer covers the sidewalls of the isolator and fills in spaces between the metal leads, and provides robust mechanical bonds between the metal leads and the isolator.

A method includes forming a first magnetic material on a first surface of a conductive loop, forming a second magnetic material on a second surface of the conductive loop opposite the first surface to form an inductor, attaching a semiconductor die to a leadframe, and attaching the inductor to the leadframe with solder balls. The semiconductor die is between the inductor and the leadframe. The conductive loop: spans parallel to the leadframe; or is between the first magnetic material and the second magnetic material.

Methods, systems, and devices for enabling the use of a special, generic, or standard substrate for similar system SIP assemblies are disclosed. The required customization, which is defined by a system's interconnecting scheme, is done during package assembly by creating appropriate connections using wire bonds on pads that are placed on the substrate and intentionally left open for purpose of customization. The wire bond links can be changed as required for a given system design.

An electronics apparatus including a first substrate having a first surface and a second surface, a first switch connected to a second switch and soldered in series on the first surface of the first substrate creating a connection to allow switching between the first switch and the second switch at high frequency, an insulation having a third surface attached to the second surface of the first substrate, and a second substrate having a pocket of low permittivity located between the first switch and the second switch on a fourth surface of the insulation, the fourth surface being opposite to the third surface where the first switch and the second switch are located.

In an embodiment, a method of integrating capacitors in semiconductor devices includes: providing a lead-frame for a semiconductor device, the lead-frame including one or more electrically conductive areas, forming a dielectric layer over the electrically conductive area or areas, forming an electrically conductive layer over the dielectric layer thus forming one or more capacitors including the dielectric layer sandwiched between an electrically conductive area and the electrically conductive layer, and arranging a semiconductor die onto the lead-frame by providing electrical contact between the semiconductor die and the electrically conductive layer.

Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

A molding type power module includes: a leadframe including a first step and a second step; a first planar power device including a first surface having electrodes and a second surface opposite to the first surface, the electrodes being correspondingly bond to the first step respectively; and a second planar power device including a first surface having electrodes and a second surface opposite to the first surface, the electrodes being correspondingly bond to the second step respectively, wherein, the first surface of the first planar power device and the first surface of the second planar power device face each other, the projected areas thereof on a vertical direction at least partially overlap, and the first planar power device at least has one electrode electronically connected with the electrodes of the second planar power device.