A semiconductor package includes a base material, a capture land, an interconnection structure, a semiconductor chip and an encapsulant. The base material has a top surface and an inner lateral surface. The capture land is disposed in or on the base material, and has an outer side surface. The interconnection structure is disposed along the inner lateral surface of the base material, and on the capture land. The interconnection structure has an outer side surface. An outer side surface of the semiconductor package includes the outer side surface of the capture land and the outer side surface of the interconnection structure. The semiconductor chip is disposed on the top surface of the base material. The encapsulant is disposed adjacent to the top surface of the base material, and covers the semiconductor chip.

A packaging method includes steps of: forming first and second wiring layers electrically connected to each other on two opposite surfaces of a substrate; then configuring mother substrate interconnecting bumps on the first wiring layer and along perimeter of a daughter substrate unit, and then cutting along the perimeter of the daughter substrate unit to expose lateral faces of the mother substrate interconnecting bumps and configuring solder materials thereon; then configuring first and second chips on the first and the second wiring layers to form electrical interconnection between the two chips. A package structure enables interconnecting two chips through one single daughter substrate unit with its wiring layers directly connecting with lateral face contacts of the mother carrier substrate through the mother substrate interconnecting bumps. Hence, area of the daughter substrate unit is reduced; lengths of the interconnection paths are shortened, and qualities of communication and space utilization are enhanced.

A semiconductor package includes a leadframe including a diepad and a first row of leads, wherein at least one lead of the first row of leads is physically separated from the diepad by a gap. The semiconductor package further includes a semiconductor component arranged on the leadframe. The semiconductor package further includes an encapsulation material encapsulating the leadframe and the semiconductor component, wherein the encapsulation material includes a bottom surface arranged at a bottom surface of the semiconductor package, a top surface and a side surface extending from the bottom surface to the top surface. A side surface of at least one lead of the first row of leads is flush with the side surface of the encapsulation material. The flush side surface of the at least one lead is covered by an electroplated metal coating.

Electrical components may have plastic packages. Contacts may be formed on exterior surfaces of the plastic packages. A plastic package for an electrical component may have an elongated shape that extends along a longitudinal axis. A first groove may run parallel to the longitudinal axis on a lower surface of the plastic package. A second groove may run perpendicular to the first groove on an opposing upper surface of the plastic package. The electrical components may be coupled to fibers in a fabric such as a woven fabric. A first solder connection may be formed between the first groove and a first fiber such as a weft fiber. A second solder connection may be formed between the second groove and a second fiber such as a warp fiber.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

A package includes a substrate having an electronic component flip chip mounted thereto by flip chip bumps. The electronic component includes an active surface and an inactive surface. Electrically conductive columns (TSV) extend through the electronic component between the active surface and the inactive surface. A RDL structure is coupled to the inactive surface, the RDL structure redistributing the pattern of the electrically conductive columns at the inactive surface to a pattern of inactive surface RDL lands. The inactive surface RDL lands are exposed through via apertures of a package body. By using the inactive surface of the electronic component to distribute the inactive surface RDL lands, the allowable size of the electronic component is maximized.

In examples, a semiconductor package comprises a ceramic substrate and a horizontal metal layer covered by the ceramic substrate. The metal layer is configured to carry signals in the 5 GHz to 38 GHz frequency range. The package also includes a vertical castellation on an outer surface of the ceramic substrate, the castellation coupled to the metal layer and having a height ranging from 0.10 mm to 0.65 mm.

A wiring board including a component mounting portion with an increased strength is provided. In addition, an electronic device and an electronic module with high reliabilities are provided. The wiring board includes a base having a first face and a conductor positioned on the first face. The conductor has a region in which a plurality of first protrusions are positioned on a surface of the conductor, the plurality of first protrusions protruding in a same oblique direction that is oblique to a direction normal to the first face. The electronic device and the electronic module include the above-described wiring board and an electronic component mounted on the wiring board.

A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.