In a method for forming a semiconductor device, a plurality of conductive lines is formed as a part of a first wiring level of the semiconductor device. The first wiring level is positioned over a first level having a plurality of transistor devices. The plurality of conductive lines extends parallel to the first level. In addition, a programmable horizontal bridge is formed that extends parallel to the first level, and electrically connects a first conductive line and a second conductive line of the plurality of conductive lines in the first wiring level. The programmable horizontal bridge is formed based on a programmable material that changes phase between a conductive state and a non-conductive state according to a current pattern delivered to the programmable horizontal bridge.

A fusible structure includes a metal line with different portions having different thicknesses. Thinner portions of the metal line are designed to be destructively altered at lower voltages while thicker portions of the metal line are designed to be destructively altered at lower voltages. Furthermore, one or more dummy structures are disposed proximal to the thinner portions of the metal line. In some embodiments, dummy structures are placed with sufficient proximity so as to protect against metal sputtering when metal line is destructively altered.

An Integrated Circuit (IC) includes electronic circuitry, an electronic fuse (eFuse) and a protection circuit. The eFuse is configured to be selectably programmed to a logical state. The electronic circuitry is configured to read the eFuse and to operate in accordance with the logical state read from the eFuse. The eFuse has a first range of operational voltages, and the electronic circuitry has a second range of operational voltages that is broader than the first range of operational voltages. The protection circuit is configured to prevent the electronic circuitry from misreading the logical state of the eFuse due to a voltage supply to the IC falling within the second operational voltage range but outside the first operational voltage range.

A fuse structure includes a gate structure, a first electrode, a second electrode and an isolation structure. The gate structure is at least partially formed on an active area of a substrate. The first electrode is formed on the active area of the substrate and spaced apart from the gate structure. The second electrode is formed at least on a side of the gate structure. The isolation structure is formed between the active area and the second electrode.

A semiconductor device and a method of operating the same are provided. The semiconductor device includes a transistor and a fuse structure electrically connected to the transistor. The fuse structure includes a first fuse element, a second fuse element, and a fuse medium. The second fuse element at least partially overlaps the first fuse element. The fuse medium connects the first fuse element and the second fuse element. The fuse medium includes an electrically conductive material.

Provided is a semiconductor device and corresponding method of fabricating the same. The semiconductor device comprises a plurality of bottom lines. One or more top vias are arranged on top of the plurality of bottom lines. One or more electronic fuses (eFuses) are also arranged on top of the plurality of bottom lines. Each eFuse of the one or more eFuses is a via having a smaller critical dimension that the one or more top vias. A plurality of top lines are arranged on top of the one or more top vias and the one or more eFuses.

An integrated circuit (IC), comprising a fuse structure (eFuse) formed in a resistive layer over a semiconductor substrate, the eFuse subject to a change in resistance through the controlled application of a programming current from a programming voltage source connected to a first terminal of the eFuse; a blow transistor formed on or over the substrate and having a control terminal configured to cause the programming current to flow through the eFuse in response to a programming signal; an intermediate transistor formed on or over the substrate and electrically coupled in series between a second terminal of the eFuse and the blow transistor; and, control circuitry formed on or over the substrate and electrically coupled to a node between the second terminal of the eFuse and the intermediate transistor, the control circuitry configured to reduce the flow of programming current through the eFuse in the event that a voltage detected at the node reaches a threshold level.

The present application discloses a method for preparing a semiconductor device including an electronic fuse control circuit. The method includes providing a chip including an electronic fuse control circuit, wherein the electronic fuse control circuit includes a program voltage pad, a fuse element, a latch, a plurality of resistor selection pads, and a plurality of bonding option units. The method further includes providing a substrate including a first voltage bonding pad and a plurality of second voltage bonding pads, disposing the chip on the substrate, bonding the first voltage bonding pad to the program voltage pad, and bonding at least one of the plurality of second voltage bonding pads to at least one of the plurality of resistor selection pads.

A capacitor assembly includes a primary capacitor and a secondary capacitor formed on a substrate. The primary capacitor and the secondary capacitor can be connected by a conduction line. The conduction line can be formed from a thin metal connection. The conduction line can be severed, i.e., trimmed, to finely tune a capacitance value of the capacitor assembly. The capacitor assembly can allow for tighter tolerance and wider variance of the capacitance value of the capacitor assembly. The capacitor assembly can be trimmed after installing the capacitor assembly in the circuit, thereby enabling fine tuning of the capacitance value of the capacitor assembly for applications requiring precision tunable capacitance.

A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch via a switch node. The gate driver is coupled to a gate of the high side switch and a gate of the low side switch. The E-fuse solution network comprises a sense resistor, an E-fuse switch, an E-fuse integrated circuit (IC), and an SD circuit.