Patent classifications
H01L24/25
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes a conductive pattern on a substrate, a via layer on the conductive pattern with a via hole exposing the conductive pattern, a first electrode and a second electrode on the via layer and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, a bank layer on the first insulating layer defining an emission area and a subarea, a light-emitting element on the first insulating layer, and a first connection electrode and a second connection electrode on the first insulating layer and the light-emitting element. The first connection electrode electrically contacts an end of the light-emitting element, and the second connection electrode electrically contacts another end of the light-emitting element. The bank layer includes a bank extension portion extended to the subarea and the bank extension portion overlaps at least a portion of the via hole.
Semiconductor packages having thermal conductive patterns surrounding the semiconductor die
A semiconductor package includes a semiconductor die, a first thermal conductive pattern and a second thermal conductive pattern. The semiconductor die is encapsulated by an encapsulant. The first thermal conductive pattern is disposed aside the semiconductor die in the encapsulant. The second thermal conductive pattern is disposed over the semiconductor die, wherein the first thermal conductive pattern is thermally coupled to the semiconductor die through the second thermal conductive pattern and electrically insulated from the semiconductor die.
Chip package with antenna element
Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device includes a substrate, a light emitting element on the substrate, and including a first end portion and a second end portion that are aligned in a first direction that is substantially parallel to an upper surface of the substrate, a first contact electrode in contact with the first end portion of the light emitting element, a first electrode on the first contact electrode, and electrically connected to the first end portion of the light emitting element through the first contact electrode, and a second electrode electrically connected to the second end portion of the light emitting element.
DISPLAY DEVICE
A display device includes a display area comprising pixels, a fan-out area, a pad area, a display driver, a metal layer disposed on a substrate, a data line, a first voltage line, and a second voltage line extending in a first direction on the metal layer in the display area, a fan-out line electrically connecting the data line to the display driver on the metal layer in the fan-out area, a gate line disposed on the metal layer in the display area and extending in a second direction intersecting the first direction, a source-drain layer disposed on the gate line, and an electrode layer disposed on the source-drain layer. The first voltage line includes a first plate portion disposed on the source-drain layer in the fan-out area, and the second voltage line comprises a second plate portion disposed on the electrode layer in the fan-out area.
PIXEL AND DISPLAY DEVICE INCLUDING THE SAME
A pixel may include first and second electrodes spaced apart from each other along a first direction, first light emitting elements arranged along a second direction in a first area between the first electrode and the second electrode, and including a first end portion adjacent to the first electrode and a second end portion adjacent to the second electrode, a first contact electrode on the first end portions of the first light emitting elements, and including a transparent electrode layer, a second contact electrode on the second end portions of the first light emitting elements, and including a reflective electrode layer, a first bank pattern overlapping a portion of the first electrode beneath the first electrode, and a second bank pattern overlapping a portion of the second electrode beneath the second electrode, wherein the first and second bank patterns are spaced apart from the first area by different distances.
PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME
A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF SEMICONDUCTOR PACKAGE
A semiconductor package includes a lower semiconductor device, a plurality of conductive pillars, an upper semiconductor device, an encapsulating material, and a redistribution structure. The plurality of conductive pillars are disposed on the lower semiconductor device along a direction parallel to a side of the lower semiconductor device. The upper semiconductor device is disposed on the lower semiconductor device and reveals a portion of the lower semiconductor device where the plurality of conductive pillars are disposed, wherein the plurality of conductive pillars disposed by the same side of the upper semiconductor device and the upper semiconductor device comprises a cantilever part cantilevered over the at least one lower semiconductor device. The encapsulating material encapsulates the lower semiconductor device, the plurality of conductive pillars, and the upper semiconductor device. The redistribution structure is disposed over the upper semiconductor device and the encapsulating material.
PACKAGE-ON-PACKAGE (POP) TYPE SEMICONDUCTOR PACKAGES
Provided are package-on-package (POP)-type semiconductor packages including a lower package having a first size and including a lower package substrate in which a lower semiconductor chip is, an upper redistribution structure on the lower package substrate and the lower semiconductor chip, and alignment marks. The packages may also include an upper package having a second size smaller than the first size and including an upper package substrate and an upper semiconductor chip. The upper package substrate may be mounted on the upper redistribution structure of the lower package and electrically connected to the lower package, and the upper semiconductor chip may be on the upper package substrate. The alignment marks may be used for identifying the upper package, and the alignment marks may be below and near outer boundaries of the upper package on the lower package.
Package structure and manufacturing method thereof
A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.