A semiconductor device includes a first insulation member, a first drive conductive layer, a first semiconductor element, a second insulation member, a second drive conductive layer, a second semiconductor element, a connection member, and an encapsulation resin. The encapsulation resin encapsulates the first semiconductor element, the second semiconductor element, and the connection member. The connection member has a higher thermal conductivity than the encapsulation resin. The connection member forms a heat conduction path between the first insulation member and/or the first drive conductive layer and the second insulation member and/or the second drive conductive layer. The connection member has a higher thermal conductivity than the encapsulation resin.

A connector may include: a first substrate having a top surface, a bottom surface opposite to the top surface of the top substrate and a side surface joining an edge of the top surface of the first substrate and joining an edge of the bottom surface of the first substrate; a second substrate having a top surface, a bottom surface opposite to the top surface of the second substrate and a side surface joining an edge of the top surface of the second substrate and joining an edge of the bottom surface of the second substrate, wherein the side surface of the second substrate faces the side surface of the first substrate, wherein the top surfaces of the first and second substrates are coplanar with each other at a top of the connector and the bottom surfaces of the first and second substrates are coplanar with each other at a bottom of the connector; and a plurality of metal traces between, in a first horizontal direction, the side surfaces of the first and second substrates, wherein each of the plurality of metal traces has a top end at the top of the connector and a bottom end at the bottom of the connector.

Various embodiments may provide a semiconductor package. The semiconductor package may include a first electrical component, a second electrical component, a first heat sink, and a second heat sink bonded to a first package interconnection component and a second package interconnection component. The first package interconnection component and the second package interconnection component may provide lateral and vertical interconnections in the package.

A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layer 5 abuts on a heat dissipation surface 4a of a circuit body 100, and a heat dissipation member 7 abuts on the outside of the thermally conductive layer 5, which is a side of the heat dissipation surface 4a of the circuit body 100. A fixing member 8 abuts on a side of the circuit body 100 opposite to the heat dissipation surface 4a. A connection member 9 is penetrated at the respective end portions of the heat dissipation member 7 and the fixing member 8. FIG. 3 illustrates a state before a bolt and a nut of the connection member 9 are tightened. The heat dissipation member 7 holds a curved shape such that the central portion of the heat dissipation member 7 protrudes toward the circuit body 100. The bolt and the nut of the connection member 9 are fastened and fixed at both ends of the heat dissipation member 7 and the fixing member 8 so as to sandwich the circuit body 100. The heat dissipation member 7 is elastically deformed to bring the heat dissipation member 7 into close contact with the heat dissipation surface 4a of the circuit body 100 via the thermally conductive layer 5, and surface pressure is applied from the heat dissipation member 7 to the heat dissipation surface 4a.

A light emitting element includes: a substrate; a first emission part and a second emission part disposed on the substrate, each comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer positioned between the first semiconductor layer and the second semiconductor layer; an insulation layer covering the first emission part and the second emission part and including: a plurality of first openings that includes multiple first openings located above the first semiconductor layer of the first emission part and multiple first openings located above the first semiconductor layer of the second emission part, and a plurality of second openings that include at least one second opening located above the second semiconductor layer of the first emission part and at least one second opening located above the second semiconductor layer of the second emission part.

Provided is a rectifier device for a vehicle alternator including a rectifying element for rectifying in an alternator. The rectifying element has an Enhanced Field Effect Semiconductor Diode (EFESD). The EFESD includes a lateral conducting silicide structure and a field effect junction structure integrating side by side. A rectifier, a generator device, and a powertrain for a vehicle are also provided.

A semiconductor package may include a substrate including a first coupling terminal and a second coupling terminal, a first chip disposed on the substrate, the first chip including a first pad and a second pad, and a connection structure connecting the first coupling terminal to the first pad. A portion of the connection structure may be in contact with a first side surface of the first chip. The connection structure may include a connection conductor electrically connecting the first pad to the first coupling terminal.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A semiconductor package includes a second semiconductor die stacked on a first semiconductor die. The first semiconductor die includes a first contact pad connected to a first integrated circuit, and includes a second contact pad connected to a third contact pad by a first interconnection line. The second semiconductor die includes a fourth contact pad connected to the third contact pad and connected to a second integrated circuit. A first bonding wire is connected to the first contact pad, and a second bonding wire is connected to the second contact pad.

A semiconductor package includes a first semiconductor chip on a base chip, a second semiconductor chip on the first semiconductor chip in a first direction, each of the first and second semiconductor chips including a TSV and being electrically connected to each other via the TSV, dam structures on the base chip and surrounding a periphery of the first semiconductor chip, a first adhesive film between the base chip and the first semiconductor chip, a portion of the first adhesive film filling a space between the first semiconductor chip and the dam structures, a second adhesive film between the first semiconductor chip and the second semiconductor chip, a portion of the second adhesive film overlapping the dam structures in the first direction, and an encapsulant encapsulating a portion of each of the dam structures, the first semiconductor chip, and the second semiconductor chip.