Patent classifications
H01L24/67
SEMICONDUCTOR DEVICE WITH A PROTECTION MECHANISM AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS
A semiconductor device includes a substrate; a die attached over the substrate; and a metal enclosure continuously encircling a space and extending vertically between the substrate and the die.
SEMICONDUCTOR INTERCONNECT STRUCTURES WITH NARROWED PORTIONS, AND ASSOCIATED SYSTEMS AND METHODS
Semiconductor devices having interconnect structures with narrowed portions configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include an end portion away from the semiconductor die, the end portion having a first cross-sectional area. The pillar structure can further include a narrowed portion between the end portion and the semiconductor die, the narrowed portion having a second cross-sectional area less than the first-cross-sectional area of the end portion. A bond material can be coupled to the end portion of the pillar structure.
SEMICONDUCTOR ASSEMBLIES USING EDGE STACKING AND METHODS OF MANUFACTURING THE SAME
Semiconductor assemblies and packages using edge stacking and associated systems and methods are disclosed herein. A semiconductor package may include (1) a base substrate having a base surface, (2) one or more dies attached over the base surface, and (3) a mold material encapsulating the base substrate and the one or more dies. The package may further include connectors on a side surface thereof, wherein the connectors are electrically coupled to the base substrate and/or the one or more dies. The connectors may be further configured to electrically couple the package to one or more neighboring semiconductor packages and/or electrical circuits.
Semiconductor device with a protection mechanism and associated systems, devices, and methods
A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.
Semiconductor assemblies using edge stacking and methods of manufacturing the same
Semiconductor assemblies using edge stacking and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise stacked semiconductor packages including a base substrate having a base surface, a side substrate having a side surface orthogonal to the base surface, and a die stack disposed over the base surface and having an outermost die with an outermost surface orthogonal to the side surface. The side substrate can be electrically coupled to the die stack via a plurality of interconnects extending from the side surface of the side substrate to the first surface of the first substrate or the third surface of the outermost die. The semiconductor packages can further comprise a conductive material at an outer surface of the side substrate, thereby allowing the semiconductor packages to be electrically coupled to neighboring semiconductor packages via the conductive material.
METHOD FOR BONDING AND INTERCONNECTING SEMICONDUCTOR CHIPS
A method is provided for bonding and interconnecting two semiconductor chips arranged on semiconductor substrates. HSQ (Hydrogen Silsesquioxane) or an equivalent material is used as a bonding layer and after bonding and thinning one of the wafers (or first thinning and then bonding), the bond layer is locally irradiated by an e-beam through the thinned substrate, thereby locally transforming the bonding material into silicon oxide. Then a via opening is etched through the thinned substrate and an etch process selectively removes the oxide from an area delimited by the bonding material or vice versa. The filling of the via opening establishes an electrical connection between the bonded wafers, that is equivalent to a connection obtained by hybrid bonding, but that does not suffer from the disadvantages thereof.
3D PRINTABLE FEEDSTOCK INKS FOR SIGNAL CONTROL OR COMPUTATION
A 3D printable feedstock ink is disclosed for use in a 3D printing process where the ink is flowed through a printing nozzle. The ink may be made up of a non-conductive flowable material and a plurality of chiplets contained in the non-conductive flowable material in random orientations. The chiplets may form a plurality of percolating chiplet networks within the non-conductive flowable material as ones of the chiplets contact one another. Each one of the chiplets has a predetermined circuit characteristic which is responsive to a predetermined electrical signal, and which becomes electrically conductive when the predetermined electrical signal is applied to the ink, to thus form at least one conductive signal path through the ink.
SEMICONDUCTOR DEVICE WITH A PROTECTION MECHANISM AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS
A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.
Semiconductor device with a protection mechanism and associated systems, devices, and methods
A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.
Electrical connector with insulated conductive layer
An interconnect that has an electrically conductive layer, where a first and second insulator layers are coupled with the conductive layer. A region of the conductive layer includes an opening of a portion of the first insulator layer the second insulator layer that are adjacent to the region. An electrical connector of a first device is electrically coupled to a portion of the region on a first side of the conductive layer and an electrical conductor of a second device is electrically coupled with a portion of the region on the second side. Also, an interconnect coupled with a substrate that includes a cylinder extending from a side of the substrate with a plate coupled at the end of the cylinder with an opening that includes two or more tabs of the plate extending into the opening to receive a connector.