The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

A chip packaging method includes followings steps. A plurality of first chips are disposed on a carrier, wherein each of the first chips has a first active surface, and a plurality of first conductive pillars are disposed on the first active surface. A second active surface of a second chip is electrically connected to the first active surfaces of the first chips through a plurality of second conductive pillars. An encapsulated material is formed, wherein the encapsulated material covers the plurality of first chips, the plurality of first conductive pillars, the second chip and the plurality of second conductive pillars. The encapsulated material is partially removed to expose each of the plurality of first conductive pillars. A redistribution structure is formed on the encapsulated material, wherein the redistribution structure connects with the first conductive pillars.

A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A semiconductor module includes a semiconductor element having one and the other surface, a lead terminal connected electrically and thermally to the semiconductor element, a first solder which bonds the lead terminal and the one surface of the semiconductor element together, a circuit layer over which the semiconductor element is disposed and a second solder which bonds the other surface of the semiconductor element and the circuit layer together. The inequality

(A/B)<1 holds, where A and B are the tensile strength of the first and second solder, respectively. As a result, even if the lead terminal which thermally expands because of heat generated by the semiconductor element expands or contracts toward the semiconductor element, a stress applied by the lead terminal is absorbed and relaxed by the first solder. This prevents damage to the surface electrode of the semiconductor element by suppressing the occurrence of cracks.

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

An apparatus includes a substrate having one or more vias formed therein. At least one of the vias has at least one liner disposed on at least one sidewall thereof. The apparatus also includes at least one interconnect formed through the at least one via. The one or more interconnects comprise a solder material filled using injection molded soldering.

A method includes forming one or more vias in a substrate, forming at least one liner on at least one sidewall of at least one of the vias, and filling said at least one via with solder material using injection molded soldering. The at least one liner may comprise a solder adhesion layer, a barrier layer, or a combination of a barrier layer and a solder adhesion layer.

A semiconductor arrangement is provided. The semiconductor arrangement may include an electrically conductive plate having a surface, a plurality of power semiconductor devices arranged on the surface of the electrically conductive plate, wherein a first controlled terminal of each power semiconductor device of the plurality of power semiconductor devices may be electrically coupled to the electrically conductive plate, a plurality of electrically conductive blocks, wherein each electrically conductive block may be electrically coupled with a respective second controlled terminal of each power semiconductor device of the plurality of power semiconductor devices; and encapsulation material encapsulating the plurality of power semiconductor devices, wherein at least one edge region of the surface of the electrically conductive plate may be free from the encapsulation material.

LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.