A power conversion apparatus includes a plurality of semiconductor modules each having a semiconductor element integrated thereto; a plurality of cooling pipes that cools the semiconductor modules; a plurality of dummy modules with no integrated semiconductor element; and a pair of DC bus bars that constitute a current path between a DC power source and respective semiconductor modules. The semiconductor modules or the dummy modules, and the cooling pipes are alternately stacked to form a stack; m the plurality of semiconductor modules constitute an inverter circuit that converts a DC power supplied from the DC power source into a multi-phase AC power in which a plurality of types of AC outputs having mutually different phases are combined; and the dummy modules are each interposed between two semiconductor modules having mutually different phases of the AC outputs.

Embodiments herein generally relate to the field of package assembly to facilitate thermal conductivity. A package may have a hanging die, and attach to a printed circuit board (PCB). The package may have an active side plane and an inactive side plane opposite the first active side plane. The package may also have a ball grid array (BGA) matrix having a height determined by a distance of a furthest point of the BGA matrix from the active side plane of the package. The package may have a hanging die attached to the active side plane of the package, the hanging die having a z-height greater than the BGA matrix height. When package is attached to the PCB, the hanging die may fit into an area on the PCB that is recessed or has been cut away, and a thermal conductive material may connect the hanging die and the PCB.

A display device including a substrate, and a first light emitting element, a second light emitting element, and a third light emitting element that are disposed on the substrate, each of the light emitting elements includes a first electrode, a light emitting layer, and a second electrode, the first electrode has a first metal layer, at least one inorganic layer, at least one etch stop layer, and a second metal layer stacked on each other, and a thickness of the first electrode of the first light emitting element is different from a thickness of the first electrode of the second light emitting element.

A semiconductor device 1 of an embodiment is provided, including an insulating substrate 2, conductive pattern parts 51, 52, 53, 54, and 55 formed on the insulating substrate, a GaN-HEMI 10 disposed on the conductive pattern part 51, and a GaN-HEMT 20 disposed on the conductive pattern part 52, wherein an imaginary line L1 of the GaN-HEMT 10 and an imaginary line L2 of the GaN-HEMT 20 intersect each other, a GaN gate electrode 23 of the GaN-HEMT 20 is electrically connected to the conductive pattern part 55 via a metal wire 6, and the metal wire 6 is perpendicular to a side 55 of the GaN-HEMT 20 and a conductive pattern side 55S of the conductive pattern part 55.

A semiconductor device 1 of an embodiment is provided, including an insulating substrate 2, conductive pattern parts 51, 52, 53, 54, and 55 formed on the insulating substrate, a GaN-HEMT 10 disposed on the conductive pattern part 51, and a GaN-HEMT 20 disposed on the conductive pattern part 52, wherein an imaginary line L1 of the GaN-HEMT 10 and an imaginary line L2 of the GaN-HEMT 20 intersect each other, a GaN gate electrode 23 of the GaN-HEMT 20 is electrically connected to the conductive pattern part 55 via a metal wire 6, and the metal wire 6 is perpendicular to a side 55 of the GaN-HEMT 20 and a conductive pattern side 55S of the conductive pattern part 55.

A light-emitting diode (LED) projector includes an LED display panel and a projection lens arranged in front of LED display panel and configured to collect and project light emitted by the LED display panel. The LED display panel includes an LED panel and a micro lens array arranged over the LED panel. The LED panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, and an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits. The micro lens array includes a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies.

An interposer structure includes a plurality of front side contact interface structures for connecting the interposer structure to at least one other structure. Additionally, the interposer structure includes a plurality of back side contact interface structures for connecting the interposer structure to at least one other structure. Further, the interposer structure includes a first through substrate via and an electrically conductive shielding structure. The electrically conductive shielding structure ends before reaching a back side of the interposer substrate die and the first through substrate via is connected to the electrically conductive shielding structure at a front side of the interposer substrate die.

Embodiments herein generally relate to the field of package assembly to facilitate thermal conductivity. A package may have a hanging die, and attach to a printed circuit board (PCB). The package may have an active side plane and an inactive side plane opposite the first active side plane. The package may also have a ball grid array (BGA) matrix having a height determined by a distance of a furthest point of the BGA matrix from the active side plane of the package. The package may have a hanging die attached to the active side plane of the package, the hanging die having a z-height greater than the BGA matrix height. When package is attached to the PCB, the hanging die may fit into an area on the PCB that is recessed or has been cut away, and a thermal conductive material may connect the hanging die and the PCB.

A light-emitting diode (LED) projector includes an LED display panel and a projection lens arranged in front of LED display panel and configured to collect and project light emitted by the LED display panel. The LED display panel includes an LED panel and a micro lens array arranged over the LED panel. The LED panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, and an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits. The micro lens array includes a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies.

A semiconductor power entity including a first laminate layer; a second laminate layer; an isolation layer arranged between the first laminate layer and the second laminate layer; a first metal layer arranged at a first laminate upper main face of the first laminate layer and a second metal layer arranged at a first laminate lower main face of the first laminate layer; a third metal layer arranged at a second laminate upper main face of the second laminate layer and a fourth metal layer arranged at a second laminate lower main face of the second laminate layer; and a connection metal layer embedded in the isolation layer between the first laminate layer and the second laminate layer, the connection metal layer forming an electrical connection with the second metal layer and the third metal layer.