A semiconductor package includes a silicon substrate including a cavity and a plurality of through holes spaced apart from the cavity, a first semiconductor chip in the cavity, a plurality of conductive vias in the plurality of through holes, a first redistribution layer on the silicon substrate and connected to the first semiconductor chip and the conductive vias, and a second redistribution layer below the silicon substrate and connected to the first semiconductor chip and the plurality of conductive vias.

A stack package includes a first sub-package, a second sub-package stacked on the first sub-package. The first sub-package is configured to include first and second semiconductor dies, a first flexible bridge die disposed between the first and second semiconductor dies.

The present invention provides a semiconductor module capable of improving a bandwidth between a logic chip and a RAM. According to the present invention, a semiconductor module 1 is provided with: a logic chip; a pair of RAM units 30 each composed of a lamination-type RAM module; a first interposer 10 electrically connected to the logic chip and to each of the pair of RAM units 30; and a connection unit 40 that communicatively connects the logic chip and each of the pair of RAM units 30, wherein one RAM unit 30a is placed on the first interposer 10, and has one end portion disposed so as to overlap, in the lamination direction C, one end portion of the logic chip with the connection unit 40 therebetween, and the other RAM unit 30b is disposed so as to overlap the one RAM unit 30a with the connection unit 40 therebetween, and is also disposed along the outer periphery of the logic chip.

Power modules of a power module assembly each have a power card including a substrate, signal pins, and power terminals, and a casing over molded on the power card to define a passageway extending between opposite ends of the power module, and a continuous uninterrupted thermal path from the power card to the passageway. The modules are arranged end-to-end to define a continuous fluid pathway via the passageways.

Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a photonic receiver; and a die coupled to the photonic receiver by interconnects, wherein the die comprises a device layer between a first interconnect layer of the die and a second interconnect layer of the die. In still some embodiments, a microelectronic assembly may include a photonic transmitter; and a die coupled to the photonic transmitter by interconnects, wherein the die comprises a device layer between a first interconnect layer of the die and a second interconnect layer of the die.

A semiconductor package includes a package substrate, a logic chip on the package substrate, a memory stack structure on the package substrate and including first and second semiconductor chips stacked along a first direction, and a first bump between the package substrate and the memory stack structure. The logic chip and the memory stack are spaced apart along a second direction, crossing the first direction, on the package substrate. The first semiconductor chip includes a through via electrically connected to the second semiconductor chip, a chip signal pad connected to the through via, and a first redistribution layer electrically connected to the chip signal pad and having an edge signal pad in contact with the first bump. A distance between the logic chip and the edge signal pad along the second direction is less than that between the logic chip and the chip signal pad.

The present invention provides a semiconductor module capable of improving a bandwidth between a logic chip and a RAM. According to the present invention, a semiconductor module 1 is provided with: a logic chip; a pair of RAM units 30 each composed of a lamination-type RAM module; a first interposer 10 electrically connected to the logic chip and to each of the pair of RAM units 30; and a connection unit 40 that communicatively connects the logic chip and each of the pair of RAM units 30, wherein one RAM unit 30a is placed on the first interposer 10, and has one end portion disposed so as to overlap, in the lamination direction C, one end portion of the logic chip with the connection unit 40 therebetween, and the other RAM unit 30b is disposed so as to overlap the one RAM unit 30a with the connection unit 40 therebetween, and is also disposed along the outer periphery of the logic chip.

A light source device includes a substrate, a light emitting unit, a frame, a light permeable member, a cover plate, and a detection unit. An upper electrode layer and a lower electrode layer of the substrate are respectively arranged on two opposite sides of the substrate, and are electrically coupled to each other. The light emitting unit is disposed on the upper electrode layer. The frame is disposed on the substrate and surrounds the light emitting unit. The light permeable member is disposed on the frame and covers the light emitting unit. The cover plate is disposed on the light permeable member and is fixed to the frame. The detection unit includes a detection circuit formed on the light permeable member or the cover plate and two transmission circuits formed on the frame. The detection circuit is electrically coupled to the upper electrode layer through the transmission circuits.

A load controller includes a casing; a busbar module, the busbar module including a DC busbar and an AC busbar connected to a load; a capacitor connected to an external DC power supply, the capacitor being connected to the DC busbar; an IGBT power module, an input end of each IGBT being connected to the DC busbar, and an output end of each IGBT being connected to the AC busbar; a heat-dissipating module, the heat-dissipating module including multiple heat-dissipating fins, each IGBT in a same column of IGBTs being sandwiched between adjacent two heat-dissipating fins; a driving circuit board, the driving circuit board being electrically connected to each IGBT; and a control circuit board, the control circuit board being connected to the driving circuit board, where all of the busbar module, the IGBT power module, the heat-dissipating module, the driving circuit board and the control circuit board are disposed on the casing.