A circuit module includes a substrate module including an upper main surface with a normal line extending in a vertical direction, an electronic component on the substrate module, and a bonding adhesive fixing the electronic component to the upper main surface. The electronic component includes a first electrode. The substrate module includes a second electrode on the right of the bonding adhesive. The first electrode is electrically connected to the second electrode through solder. A first recess recessed downward and including a bottom is in the upper main surface. An upper end of the second electrode is above the bottom. The first recess includes a first area on the left of a first electrode and overlapping the second electrode when viewed in the lateral direction. A material of the first recess is identical to a material of the upper main surface.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.

A manufacturing method of a semiconductor package includes at least the following steps. A rear surface of a semiconductor die is attached to a patterned dielectric layer of a first redistribution structure through a die attach material, where a thickness of a portion of the die attach material filling a gap between the rear surface of the semiconductor die and a recessed area of the patterned dielectric layer is greater than a thickness of another portion of the die attach material interposed between the rear surface of the semiconductor die and a non-recessed area of the patterned dielectric layer. An insulating encapsulant is formed on the patterned dielectric layer of the first redistribution structure to cover the semiconductor die and the die attach material. Other methods for forming a semiconductor package are also provided.

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

A transistor package comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

A semiconductor package includes: a lower redistribution structure including a lower insulating layer and a lower redistribution layer; a semiconductor chip disposed on the lower redistribution structure; connection conductors connected to the lower redistribution layer; an encapsulant disposed on the connection conductors; and an upper redistribution structure including an upper insulating layer and upper redistribution layers, wherein the upper insulating layer is disposed on the encapsulant, wherein the upper redistribution layers are disposed on the upper insulating layer, wherein the connection conductors and the encapsulant form a first step, wherein the upper redistribution layers include first and second upper redistribution layers, wherein the first upper redistribution layer does not overlap the connection conductors, wherein the second upper redistribution layer overlaps the connection conductors, wherein the first and second upper redistribution layers form a second step with a height substantially equal to or smaller than that of the first step.

A power semiconductor device includes first and second disc-shaped electrodes and a wafer sandwiched between the electrodes. An outer insulating ring is attached to the first and second electrodes and surrounds the wafer. An inner insulating ring is located inside of the outer insulating ring and surrounds the wafer and a ring-shaped first flange portion laterally surrounds a main portion of the first electrode. An O-ring radially surrounds the main portion of the first electrode and is sandwiched in a vertical direction between the inner insulating ring and the first flange portion. In a relaxed state the O-ring has a cross-section that is elongated in the vertical direction such that, in the relaxed state, a height of the O-ring in the vertical direction is greater than a width of the O-ring in a radial direction that is parallel to the first contact face.

A transistor package comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

A semiconductor package includes a substrate including a redistribution layer, a chip structure including a first semiconductor chip disposed on the substrate and including a first through-electrode, a second semiconductor chip disposed on the first semiconductor chip and electrically connected to the first semiconductor chip by the first through-electrode, and a first encapsulant at least partially surrounding the second semiconductor chip. A first connection bump disposed between the substrate and the chip structure and electrically connects the first through-electrode to the redistribution layer, a second connection bump disposed below the substrate and electrically connects to the redistribution layer, and a second encapsulant e the chip structure on the substrate. The first semiconductor chip is connected to and faces the second semiconductor chip.