Structures and methods of forming moisture barrier capacitor on a semiconductor component are disclosed. The capacitor is located on the periphery of a semiconductor chip and includes an inner plate electrically connected to a voltage node, an outer plate with fins for electrically connecting to a different voltage node.

A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.

An analog capacitor is disclosed. The analog capacitor may include a main analog capacitor, an interlayer insulating layer, and a plurality of stacked sub analog capacitors. The main analog capacitor may be formed over a semiconductor substrate. The interlayer insulating layer may be interposed between the semiconductor substrate and the main analog capacitor. The plurality of stacked sub analog capacitors may be inserted into the interlayer insulating layer.

Various embodiments of the present application are directed towards a metal-insulator-metal (MIM) capacitor. The MIM capacitor comprises a bottom electrode disposed over a semiconductor substrate. A top electrode is disposed over and overlies the bottom electrode. A capacitor insulator structure is disposed between the bottom electrode and the top electrode. The capacitor insulator structure comprises at least three dielectric structures vertically stacked upon each other. A bottom half of the capacitor insulator structure is a mirror image of a top half of the capacitor insulator structure in terms of dielectric materials of the dielectric structures.

The present disclosure concerns an integrated circuit comprising a substrate, the substrate comprising a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the circuit comprising a three-dimensional capacitor formed inside and on top of the first region, and at least first and second connection terminals formed on the second region, the first and second connection terminals being respectively connected to first and second electrodes of the three-dimensional capacitor.

A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and the insulator concentrically surrounding a column. The conductor, the insulator and the conductor are alternately configured to be a transistor, a resistor, or a capacitor. The column also functions as a via to send signals from a first layer to a second layer of the semiconductor device. The combination of via and at least one of a transistor, a capacitor, or a resistor in a semiconductor device decreases an area penalty as compared to a semiconductor device that has vias formed separately from at least one of a transistor, a capacitor, or resistor.

A semiconductor structure includes: a pad structure disposed above a substrate; and a capacitor structure which is disposed between the substrate and the pad structure, is arranged to be opposite to the pad structure, and includes at least two capacitor units connected in parallel and spaced apart from each other, each of the capacitor units includes at least one capacitor device.

The invention concerns an implementable semiconductor device that includes an electrode configured to be in contact with biological tissue and at least one capacitor, and wherein the capacitor includes a capacitor electrode having a first surface facing and in contact with the electrode configured to be in contact with biological tissue.

An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.