Embodiments provide a transistor structure, a semiconductor structure and a fabrication method thereof. The method for fabricating a transistor structure includes: providing a substrate; forming a channel layer on an upper surface of the substrate, the channel layer including a two-dimensional layered transition metal material layer; forming a source and a drain on two opposite sides of the channel layer, respectively; forming a gate dielectric layer on the upper surface of the substrate, the gate dielectric layer covering the channel layer, the source, and the drain; and forming a gate on an upper surface of the gate dielectric layer, the gate being positioned at least directly above the channel layer.

Embodiments provide a transistor structure, a semiconductor structure and a fabrication method thereof. The method for fabricating a transistor structure includes: providing a substrate; forming a channel layer on an upper surface of the substrate, the channel layer including a two-dimensional layered transition metal material layer; forming a source and a drain on two opposite sides of the channel layer, respectively; forming a gate dielectric layer on the upper surface of the substrate, the gate dielectric layer covering the channel layer, the source, and the drain; and forming a gate on an upper surface of the gate dielectric layer, the gate being positioned at least directly above the channel layer.

In certain examples, methods and semiconductor structures are directed to a method comprising steps of forming by monolithically integrating or seeding via polycrystalline diamond (PCD) particles on a GaN-based layer characterized as including GaN in at least a surface region of the GaN-based layer. After the step of seeding, the PCD particles are grown under a selected pressure to form a diamond layer section and to provide a semi-conductive structure that includes the diamond layer section integrated on or against the surface region of the GaN-based layer.

Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed four terminal JFET includes an integrated high voltage capacitor (HVC). The JFET includes a first terminal coupled to a drain region, a second terminal coupled to the source region, a third terminal coupled to the base region, and an integrated HVC terminal coupled to an integrated HVC electrode which forms an HVC with the drain region. The JFET also includes a channel formed by a channel region. A bias on the base region fully depletes the channel of majority carriers. The channel has an unbiased concentration of majority carriers. The integrated HVC electrode is positioned relative to the channel region such that applying the bias to the integrated HVC terminal depletes the channel by at most ten percent of the unbiased concentration of majority carriers.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

The present disclosure provides a driving circuit, a driving IC, and a driving system, relating to the technical field of electronic circuits. The driving circuit comprises a control module and a driving signal output module, the control module is electrically connected to the driving signal output module, and the driving signal output module is configured to be electrically connected to a to-be-driven device, wherein the driving signal output module comprises at least two transistors, and the at least two transistors are epitaxially grown on the same substrate; and the control module is configured to control a closed state of the at least two transistors, so as to control an operation state of the to-be-driven device.

A high electron mobility transistor includes a substrate. A first III-V compound layer is disposed on the substrate. A second III-V compound layer is embedded within the first III-V compound layer. A P-type gallium nitride gate is embedded within the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer and contacts the P-type gallium nitride gate. A source electrode is disposed at one side of the gate electrode. A drain electrode is disposed at another side of the gate electrode.

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming a plurality of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing a first etch step; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth metal layer above; forming a connection to the second metal layer which includes a via through the second level; forming a fifth metal layer above, where some second transistors include a metal gate, and the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.